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説明:

Field-effect devices constructed from van der Waals (vdW) materials with hexagonal boron nitride (hBN) as gate dielectrics usually exhibit negligible hysteresis, enabling exquisitely detailed studies of diverse gate-voltage-tuned phenomena. Recently, a dramatic hysteresis effect, sometimes called the “gate doesn’t work” or “electron ratchet” effect, has been observed sporadically in otherwise typical vdW devices. Its lack of reproducibility has hindered clear identification of its origin, which has been postulated to rely on the combination of bilayer graphene with moiré patterns from rotationally aligned hBN. Here, we report observing this effect in devices with thicker graphite channels, associating it with a single graphite surface. Remarkably, the hysteresis persists at room temperature, without intentional hBN alignment, and even with a WSe2 monolayer inserted between the graphite and hBN. Furthermore, it exhibits continuous relaxation over long time scales. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acs.nanolett.5c01799.

キーワード: van der Waals materials, Hysteresis, Hexagonal boron nitride (hBN)

刊行年月日: 2025-05-28

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 25 issue. 21 p. 8768-8774

研究助成金:

• Idaho National Laboratory 23-4683
• Ministry of Education, Culture, Sports, Science and Technology
• Intelligence Community Postdoctoral Research Fellowship Program
• Clean Energy Institute
• Office of the Director of National Intelligence
• Office of Naval Research N00014-22-1-2582
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• U.S. Department of Energy
• National Science Foundation 2308979
• National Science Foundation DMR-2041972

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.5c01799

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更新時刻: 2026-08-05 10:00:53 +0900

MDRでの公開時刻: 2026-08-05 12:30:57 +0900