# Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy

https://mdr.nims.go.jp/datasets/d3fa0d80-8ba5-4d73-b60b-29b049142f9b

## File

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## Id

d3fa0d80-8ba5-4d73-b60b-29b049142f9b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-13T13:49:52.677083Z

## Updated at

2025-03-11T03:30:23.846922Z

## Published at

2025-03-11T03:30:24.053408Z

## Doi

https://doi.org/10.48505/nims.4443

## First published url

https://doi.org/10.1002/pssb.202300584

## Date published

2024-03-11

## Recorded date published

2024-11

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase
    Epitaxy
  title_type: original
  lang: en

## Description

- description: High-resistive GaN has been studied for epitaxial substrate of lateral
    power devices. Fe-, C-, Mn- and Zn-doped GaNs were reported to exhibit high resistivity
    with the concentration of ~1 × 1018 cm−3. However, less impurites concentrations
    are more favorable for the growth of GaN monocrystal. Therefore, it is nescessary
    to search other dopants for GaN which realize high resistivity with the concentration
    of less than 1 × 1018 cm−3. This study shows that Ni-doped GaN monocrystals were
    grown on GaN substrates via HVPE using NiCl2 as the precursor for the first time.
    Two Ni-doped GaN substrates with Ni concentrations of 2.7 × 1017 cm−3 and 2.9
    × 1018 cm−3 were obtained varying the partial pressure of NiCl2. The dependence
    of resistivities for the Ni-doped GaN on temperature were measured by the Hall
    effect method. Ni-doped GaN with the concentration of 2.7 × 1017 cm−3 exhibited
    higher resistivty than that with the concentration of 2.9 × 1018 cm−3. Using calculation
    with charge neutrality condition, the depth of Ni impurity in GaN was determined
    1.4~1.5 eV, which indicated that the high resistivity of Ni-doped GaN was due
    to the deep acceptor of Ni.
  description_type: abstract
  lang: und

## Creator

- name: Takafumi Odani
  role: author
  orcid: https://orcid.org/0009-0007-6735-6692
- name: Kenji Iso
  role: author
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Hirotaka Ikeda
  role: author
- name: Tae Mochizuki
  role: author
- name: Satoru Izumisawa
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: GaN HVPE
  schema: not_defined

## Rights

- description: 'This is the peer reviewed version of the following article: Realization
    of High-Resistive Ni-Doped GaN Crystal by Hydride Vapor-Phase Epitaxy, which has
    been published in final form at https://doi.org/10.1002/pssb.202300584. This article
    may be used for non-commercial purposes in accordance with Wiley Terms and Conditions
    for Use of Self-Archived Versions. This article may not be enhanced, enriched
    or otherwise transformed into a derivative work, without express permission from
    Wiley or by statutory rights under applicable legislation. Copyright notices must
    not be removed, obscured or modified. The article must be linked to Wiley’s version
    of record on Wiley Online Library and any embedding, framing or otherwise making
    available the article or pages thereof by third parties from platforms, services
    and websites other than Wiley Online Library must be prohibited.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-03-11
end_date: 2025-03-11

## Journal

- title: physica status solidi (b)
  issn: '03701972'

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



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  filename: Manuscript_revision2_production.docx
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filename: Manuscript_revision2_production.docx