# Schottky barrier lowering in n-AlGaAs/GaAs/AlGaAs double heterojunctions by local light illumination

https://mdr.nims.go.jp/datasets/d36d551d-0485-4e63-843a-5878c6d40335

## File

- [Manuscript_250616.pdf](https://mdr.nims.go.jp/filesets/41d1460b-1f67-4959-87b6-926464db6678/download) ([Detail](https://mdr.nims.go.jp/filesets/41d1460b-1f67-4959-87b6-926464db6678.md))

## Id

d36d551d-0485-4e63-843a-5878c6d40335

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-07-09T05:20:16.194022Z

## Updated at

2025-07-09T05:46:31.432259Z

## Published at

2026-07-06T23:25:49.763068Z

## Doi

https://doi.org/10.48505/nims.5569

## First published url

https://doi.org/10.35848/1347-4065/ade64e

## Date published

2025-07-01

## Recorded date published

2025-7-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Schottky barrier lowering in n-AlGaAs/GaAs/AlGaAs double heterojunctions
    by local light illumination
  title_type: original
  lang: en

## Description

- description: We investigated the wavelength dependence of the Schottky photocurrent
    (ISG) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction under local light illumination.
    ISG was measured with the illumination from two light sources (Light A and B).
    Light A illuminated the entire Schottky gate region at 60 μW/mm² with varying
    the wavelength (940, 975, and 1064 nm), while Light B (670 nm laser) locally illuminated
    the ungated region at power levels (PB) ranging from 0 to 2.9 μW. At low PB (≤
    86 nA) and high PB (≥ 0.14 μW), ISG increases and decreases respectively with
    the increasing photon energy of Light A. By analyzing the experimental data using
    a hot carrier model, this behavior is attributed to the Schottky barrier lowering
    induced by Light B. The reduction in the effective Schottky barrier height increases
    with increasing PB, reaching about 0.5 – 0.6 eV.
  description_type: abstract
  lang: und

## Creator

- name: Takuya Kawazu
  role: author
  orcid: https://orcid.org/0000-0001-8081-4167

## Contact agent



## Publisher

organization: IOP Publishing

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## Keyword

- subject: Schottky barrier
  schema: not_defined

## Rights

- description: This is the Accepted Manuscript version of an article accepted for
    publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or any
    version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/ade64e.
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-07-07
end_date: 2026-07-07

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '7'
  start_page: 75001

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## Fileset

- id: 41d1460b-1f67-4959-87b6-926464db6678
  filename: Manuscript_250616.pdf
  content_type: application/pdf
  size: 959907
  md5: 3f34d9f8eaed87617ab30487fc994426

## Thumbnail

fileset_id: 41d1460b-1f67-4959-87b6-926464db6678
filename: Manuscript_250616.pdf