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説明:

We investigated the wavelength dependence of the Schottky photocurrent (ISG) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction under local light illumination. ISG was measured with the illumination from two light sources (Light A and B). Light A illuminated the entire Schottky gate region at 60 μW/mm² with varying the wavelength (940, 975, and 1064 nm), while Light B (670 nm laser) locally illuminated the ungated region at power levels (PB) ranging from 0 to 2.9 μW. At low PB (≤ 86 nA) and high PB (≥ 0.14 μW), ISG increases and decreases respectively with the increasing photon energy of Light A. By analyzing the experimental data using a hot carrier model, this behavior is attributed to the Schottky barrier lowering induced by Light B. The reduction in the effective Schottky barrier height increases with increasing PB, reaching about 0.5 – 0.6 eV.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ade64e.

キーワード: Schottky barrier

刊行年月日: 2025-07-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 7 p. 75001-

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5569

公開URL: https://doi.org/10.35848/1347-4065/ade64e

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更新時刻: 2025-07-09 14:46:31 +0900

MDRでの公開時刻: 2026-07-07 08:25:49 +0900