# Electrostatically Induced Black Phosphorus Infrared Photodiodes

https://mdr.nims.go.jp/datasets/d341c2bf-bc43-4119-9512-286c202a716f

## File

- [Adv Funct Materials - 2024 - Yan - Electrostatically Induced Black Phosphorus Infrared Photodiodes.pdf](https://mdr.nims.go.jp/filesets/b6ab22a0-2aa3-4206-8421-32ef710e4f60/download) ([Detail](https://mdr.nims.go.jp/filesets/b6ab22a0-2aa3-4206-8421-32ef710e4f60.md))

## Id

d341c2bf-bc43-4119-9512-286c202a716f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-13T08:24:57.988601Z

## Updated at

2025-02-14T03:31:30.864124Z

## Published at

2025-02-14T03:31:30.948164Z

## Doi



## First published url

https://doi.org/10.1002/adfm.202316000

## Date published

2024-05-07

## Recorded date published

2024-8

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electrostatically Induced Black Phosphorus Infrared Photodiodes
  title_type: original
  lang: en

## Description

- description: Homojunctions are key elements in many mainstream electronic devices.
    However, conventional dopant-based ‘pn’ homojunctions are not easily achievable
    in new material families, such as the two-dimensional (2D) materials. Several
    recent 2D material studies have shown that, instead, lateral pn homojunctions
    can be electrostatically induced using back gates localized to either the source
    or drain contacts. Here, we demonstrate hBN-encapsulated bP dual-gate device which
    can form lateral pn homojunctions in either direction by switching the back gate
    configuration. Importantly, this study extends the state-of-the-art for this architecture
    by characterizing the photoresponse under infrared (λ = 2.2 µm) illumination.
    It is shown that when biased to form a homojunction the device exhibits the photovoltaic
    effect, resulting in a specific detectivity of 8.5 × 108 cm Hz1/2 W-1 at 77 K
    under short-circuit conditions, and an open circuit photovoltage up to 175 mV
    at 77 K. Further, it is shown that the device can also be operated in a photoconductive
    mode of operation allowing a high responsivity of 0.55 A W-1 (VDS = -500 mV, 77
    K). As such, this reconfigurable device can be switched between photovoltaic and
    photoconductive modes of operation to prioritize low noise or high responsivity.
  description_type: abstract
  lang: und

## Creator

- name: Wei Yan
  role: author
- name: Shifan Wang
  role: author
- name: Kaijian Xing
  role: author
- name: Sivacarendran Balendhran
  role: author
- name: Mike Tebyetekerwa
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Michael S. Fuhrer
  role: author
- name: Kenneth B. Crozier
  role: author
- name: James Bullock
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Homojunctions
  schema: not_defined
- subject: 2D materials
  schema: not_defined
- subject: photoresponse
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Functional Materials
  issn: '16163028'
  volume: '34'
  issue: '32'
  article_number: '2316000'

## Conference



## Related item



## Funding

- identifier: DE210101129
  funder_name: Australian Research Council
- identifier: DP210103428
  funder_name: Australian Research Council
- identifier: DP200101345
  funder_name: Australian Research Council

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b6ab22a0-2aa3-4206-8421-32ef710e4f60
  filename: Adv Funct Materials - 2024 - Yan - Electrostatically Induced Black Phosphorus
    Infrared Photodiodes.pdf
  content_type: application/pdf
  size: 2922096
  md5: 7e234ff4ca607014e6afe949f6ce5901

## Thumbnail

fileset_id: b6ab22a0-2aa3-4206-8421-32ef710e4f60
filename: Adv Funct Materials - 2024 - Yan - Electrostatically Induced Black Phosphorus
  Infrared Photodiodes.pdf