# Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor

https://mdr.nims.go.jp/datasets/d2f9924d-39e7-4a01-b92f-ee4209fb3779

## File

- [AcceptedManuscript_APL_2025_Sasama.pdf](https://mdr.nims.go.jp/filesets/4b38c078-37f2-4d72-8e8d-18afb191d17d/download) ([Detail](https://mdr.nims.go.jp/filesets/4b38c078-37f2-4d72-8e8d-18afb191d17d.md))
- [APL_2025_sasama_SupplementalInformation.pdf](https://mdr.nims.go.jp/filesets/da3cdd2a-b8e4-423c-a1c4-9adfc71072e5/download) ([Detail](https://mdr.nims.go.jp/filesets/da3cdd2a-b8e4-423c-a1c4-9adfc71072e5.md))

## Id

d2f9924d-39e7-4a01-b92f-ee4209fb3779

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-10-10T10:01:02.479890Z

## Updated at

2025-10-21T07:06:02.110199Z

## Published at

2025-10-21T06:43:26.026749Z

## Doi

https://doi.org/10.48505/nims.5802

## First published url

https://doi.org/10.1063/5.0272041

## Date published

2025-10-06

## Recorded date published

2025-10-6

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated
    diamond heterojunction field-effect transistor
  title_type: original
  lang: en

## Description

- description: Hydrogen-terminated diamond field-effect transistors (FETs) using a
    hexagonal boron nitride (h-BN) gate insulator were fabricated on a diamond surface
    with reduced surface roughness in the direction of source/drain electrodes. The
    diamond surface was prepared on a mesa structure using chemical vapor deposition
    with a low methane concentration. The hydrogen-terminated surface was laminated
    with the h-BN gate insulator without air exposure to prevent the adsorption of
    atmospheric surface acceptors. The hydrogen-terminated diamond FET exhibited a
    high mobility of ≈1000 cm^2/(Vs) at room temperature. We performed theoretical
    analysis on the temperature and carrier density dependences of mobility, which
    suggested that Coulomb and surface roughness scattering were effectively reduced.
    The high mobility obtained in this study indicates the high potential of diamond
    as a semiconducting material. This study can contribute to the future development
    of diamond devices.
  description_type: abstract
  lang: und

## Creator

- name: Yosuke Sasama
  role: author
  orcid: https://orcid.org/0000-0002-8358-6101
- name: Takuya Iwasaki
  role: author
  orcid: https://orcid.org/0000-0002-1103-2433
- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Yamaguchi Takahide
  role: author
  orcid: https://orcid.org/0000-0003-0208-7317

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: diamond
  schema: not_defined
- subject: field-effect transistors
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi,
    Yamaguchi Takahide; Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated
    diamond heterojunction field-effect transistor. Appl. Phys. Lett. 6 October 2025;
    127 (14): 143502 and may be found at https://doi.org/10.1063/5.0272041. '
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '127'
  issue: '14'
  article_number: '143502'

## Conference



## Related item



## Funding

- identifier: JPNP14004
  funder_name: New Energy and Industrial Technology Development Organization
- identifier: JP22H01962
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXP1224NM5213
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Computational method



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## Fileset

- id: 4b38c078-37f2-4d72-8e8d-18afb191d17d
  filename: AcceptedManuscript_APL_2025_Sasama.pdf
  content_type: application/pdf
  size: 904714
  md5: b9a2618f3b8dec796fc76288e7c0fbfe
- id: da3cdd2a-b8e4-423c-a1c4-9adfc71072e5
  filename: APL_2025_sasama_SupplementalInformation.pdf
  content_type: application/pdf
  size: 2458583
  md5: bb48eada5fbab87653ffc77ce506bd67

## Thumbnail

fileset_id: 4b38c078-37f2-4d72-8e8d-18afb191d17d
filename: AcceptedManuscript_APL_2025_Sasama.pdf