Arnaud P. Nono Tchiomo
(Louisiana State University)
;
Anand Sharma
(Louisiana State University)
;
Sethulakshmi Sajeev
(Louisiana State University)
;
Anna Scheid
(Max Planck Institute for Solid State Research)
;
Peter A. van Aken
(Max Planck Institute for Solid State Research)
;
Takayuki Harada
(Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science)
;
Prosper Ngabonziza
(Louisiana State University)
説明:
(abstract)We report on a combined structural and magnetotransport study of Hall bar devices of various lateral dimensions patterned side-by-side on epitaxial PdCoO2 thin films. We study the effects of both the thickness of the PdCoO2 film and the width of the channel on the electronic transport and the magnetoresistance properties of the Hall bar devices. All the films with thicknesses down to 4.88 nm are epitaxially oriented, phase-pure, and exhibit metallic behavior. At room temperature, resistivity values as low as 6.85 and 8.17µΩcm are achieved in Hall bar devices with channel width W=2.5µm and W=10µm, respectively. For the 4.88 nm thick sample, we find that while the density of the conduction electrons is comparable in both channels, the electrons move about twice as fast in the narrower channel. At low temperatures, for Hall bar devices of channel width 2.5µm fabricated on epitaxial films of thicknesses 4.88 and 5.21 nm, the electron mobilities of ≈65 and 40cm2V−1s−1, respectively, are extracted. For thin-film Hall bar devices of width 10µm fabricated on the same 4.88 and 5.21 nm thick samples, the mobility values of ≈32 and 18cm2V−1s−1 are obtained. The magnetoresistance characteristics of these PdCoO2 films are observed to be temperature- dependent and exhibit a dependency with the orientation of the applied magnetic field. When the applied field is oriented 90∘ away from the crystal 𝑐-axis, a persistent negative MR at all temperatures is observed. However when the field is parallel to the 𝑐-axis, the negative magnetoresistance is suppressed at temperatures above 150 K.
権利情報:
キーワード: low dimensional materials, magnetotransport, thin films, oxides
刊行年月日: 2025-05-22
出版者: American Physical Society (APS)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5535
公開URL: https://doi.org/10.1103/PhysRevMaterials.9.055001
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-06-17 16:30:28 +0900
MDRでの公開時刻: 2025-06-17 16:22:46 +0900
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PdCoO2_magnetotransport_Nono_Tchiomo.pdf
(サムネイル)
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サイズ | 6.94MB | 詳細 |