# Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

https://mdr.nims.go.jp/datasets/d2d17e6d-5383-4483-abe4-697d1be2d11c

## File

- [s41699-024-00507-3.pdf](https://mdr.nims.go.jp/filesets/bc40b1c2-84d0-4db7-a0a8-720194bd0265/download) ([Detail](https://mdr.nims.go.jp/filesets/bc40b1c2-84d0-4db7-a0a8-720194bd0265.md))

## Id

d2d17e6d-5383-4483-abe4-697d1be2d11c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-04T07:08:59.184782Z

## Updated at

2025-02-05T03:30:44.630442Z

## Published at

2025-02-05T03:30:44.742429Z

## Doi



## First published url

https://doi.org/10.1038/s41699-024-00507-3

## Date published

2024-11-05

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Achieving nearly barrier free transport in high mobility ReS2 phototransistors
    with van der Waals contacts
  title_type: original
  lang: en

## Description

- description: "Focusing on Rhenium disulfide (ReS2), a group VII transition metal
    di-chalcogenides (TMDC), being a\r\npromising contender system for future nanoelectronics
    and optoelectronics, here, we present an innovative pathway to experimentally
    achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs)
    by using few layered graphene as contact electrodes, further supported by comparative
    first-principles analysis. Such barrier-free contacts enable the observation of
    metal-to- insulator transition with enhanced room temperature carrier mobility
    up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction
    of 1/f noise by more than two orders of magnitude. We further demonstrate a highly
    responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength
    of 633 nm. This work demonstrates a straightforward strategy to unlock the full
    potential of ReS2 for CMOS compatible future electronic and optoelectronic devices."
  description_type: abstract
  lang: und

## Creator

- name: Shubhrasish Mukherjee
  role: author
- name: Gaurab Samanta
  role: author
- name: Md Nur Hasan
  role: author
- name: Shubhadip Moulick
  role: author
- name: Ruta Kulkarni
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Arumugum Thamizhavel
  role: author
  orcid: https://orcid.org/0000-0003-1679-4370
- name: Debjani Karmakar
  role: author
- name: Atindra Nath Pal
  role: author
  orcid: https://orcid.org/0000-0001-9584-2283

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: ReS2
  schema: not_defined
- subject: barrier-free contact
  schema: not_defined
- subject: phototransistor
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: npj 2D Materials and Applications
  issn: '23977132'
  volume: '8'
  issue: '1'
  article_number: '71'

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: bc40b1c2-84d0-4db7-a0a8-720194bd0265
  filename: s41699-024-00507-3.pdf
  content_type: application/pdf
  size: 2155303
  md5: ae1a93f44ecf4a0c68a8533b6bdcaf82

## Thumbnail

fileset_id: bc40b1c2-84d0-4db7-a0a8-720194bd0265
filename: s41699-024-00507-3.pdf