# Oxygen Defects and Instability in Very Thin a‐IGZO TFTs

https://mdr.nims.go.jp/datasets/d2c95edf-a62b-4e7f-946d-96b8c3726902

## File

- [Cho_Adv_Elect_Mater_2025.pdf](https://mdr.nims.go.jp/filesets/15779d49-8b7d-4374-9d87-9b14dbf50602/download) ([Detail](https://mdr.nims.go.jp/filesets/15779d49-8b7d-4374-9d87-9b14dbf50602.md))

## Id

d2c95edf-a62b-4e7f-946d-96b8c3726902

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-22T10:20:16.442514Z

## Updated at

2025-09-24T03:30:21.453463Z

## Published at

2025-09-24T03:18:54.674651Z

## Doi



## First published url

https://doi.org/10.1002/aelm.202500349

## Date published

2025-07-07

## Recorded date published

2025-9

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Oxygen Defects and Instability in Very Thin a‐IGZO TFTs
  title_type: original
  lang: en

## Description

- description: Amorphous oxide semiconductor (AOS) thin-film transistors (TFT) have
    gained significant attention for their potential in capacitor-free next-generation
    memory applications. However, improving threshold voltage (VTH ) stability and
    precisely controlling carrier concentration in ultra-thin channels remain critical
    challenges. In this study, an extraordinarily large positive-bias-stress (PBS)
    instability in hydrogen-free amorphous IGZO (a-IGZO)-TFTs that emerges as the
    channel thickness decreases is reported. This instability can be attributed to
    acceptors interacting with donors at shallow levels below the conduction band
    minimum (CBM).
  description_type: abstract
  lang: und

## Creator

- name: Hanjun Cho
  role: author
  orcid: https://orcid.org/0009-0009-2834-8846
- name: Masatake Tsuji
  role: author
  orcid: https://orcid.org/0000-0002-3404-6037
- name: Shigenori Ueda
  role: author
  orcid: https://orcid.org/0000-0001-9425-0614
- name: Junghwan Kim
  role: author
  orcid: https://orcid.org/0000-0001-9168-6260
- name: Hideo Hosono
  role: author
  orcid: https://orcid.org/0000-0001-9260-6728

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: a-IGZO
  schema: not_defined
- subject: TFT
  schema: not_defined
- subject: Oxygen defects
  schema: not_defined
- subject: positive-bias-stress instability
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '11'
  issue: '15'
  article_number: e00349

## Conference



## Related item



## Funding

- identifier: JPMXP1122683430
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JP23K19266
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24K17753
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 15779d49-8b7d-4374-9d87-9b14dbf50602
  filename: Cho_Adv_Elect_Mater_2025.pdf
  content_type: application/pdf
  size: 2636633
  md5: 1e7e944e27980721ec40e0a2dde32f43

## Thumbnail

fileset_id: 15779d49-8b7d-4374-9d87-9b14dbf50602
filename: Cho_Adv_Elect_Mater_2025.pdf