# Effects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure

https://mdr.nims.go.jp/datasets/d167e7fc-5c26-45c9-acf1-7cf939cc8855

## File

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## Id

d167e7fc-5c26-45c9-acf1-7cf939cc8855

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-05T07:40:40.873179Z

## Updated at

2026-02-14T11:23:13.642705Z

## Published at

2026-05-18T23:27:25.575502Z

## Doi

https://doi.org/10.48505/nims.5739

## First published url

https://dx.doi.org/10.35848/1347-4065/add0be

## Date published

2025-05-19

## Recorded date published



## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Effects of interface formation process on electronic properties of n-type
    Ti0.3Zn0.7O1.3/p-type Si stack structure
  title_type: original
  lang: en

## Description

- description: 低消費電力での動作が期待されている次世代半導体デバイスの一つであるトンネル電界効果トランジスタ(トンネルFET)の酸化物チャネル材料Ti0.3Zn0.7O1.3の電子物性に対する界面形成プロセスの影響を検討し、発表いたしました。これまでにトンネルFET用の酸化物チャネル材料には低欠陥で膜厚が均一な界面の形成により、トンネル電子のトラップを抑制することが重要であることが知られています。これまでの研究でTiとZnの組成比と熱処理条件の最適化により、欠陥と有効障壁高さの低減が可能であることを明らかにしました。本研究ではさらなるトンネル特性の向上のためには固溶体の構成元素の酸化エネルギーの違いに伴う界面反応の差を考慮する必要があることから、非晶質で低抵抗、低表面粗さが得られた組成において、界面層の形成プロセスに対する電気特性や物理特性の変化を調査した結果を報告しました。
  description_type: abstract
  lang: eng

## Creator

- name: Kenta Ogawa
  role: author
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Nano Electronics Device Materials Group
- name: Toyohiro Chikyow
  role: author
  orcid: https://orcid.org/0000-0003-3860-4806
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/LSTC Materials
    Research Lab
- name: Yuki Daimon
  role: author
  organization: Meiji University
- name: Atsushi Ogura
  role: author
  organization: Meiji University
- name: Takahiro Nagata
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Nano Electronics Device Materials Group

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: oxide semiconductor
  schema: not_defined
- subject: tunnel field effect transistor
  schema: not_defined
- subject: combinatorial method
  schema: not_defined
- subject: interface
  schema: not_defined

## Rights

- description: This is the Accepted Manuscript version of an article accepted for
    publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or any
    version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/add0be.
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-05-19
end_date: 2026-05-20

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '5'

## Conference



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## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

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## Thumbnail

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filename: 2025JJAP_Ogawa_SI.pdf