# Oxygen reduction for p-type TeOx thin-film transistor

https://mdr.nims.go.jp/datasets/d0224ae6-c558-4077-a514-3615f56698f8

## File

- [article-2026-2-16.pdf](https://mdr.nims.go.jp/filesets/16373fdc-4509-43dd-81f8-6c140779f471/download) ([Detail](https://mdr.nims.go.jp/filesets/16373fdc-4509-43dd-81f8-6c140779f471.md))

## Id

d0224ae6-c558-4077-a514-3615f56698f8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-04T07:25:00.112681Z

## Updated at

2026-06-09T08:58:56.265669Z

## Published at

2026-06-10T02:11:37.865173Z

## Doi

https://doi.org/10.48505/nims.6329

## First published url

https://doi.org/10.1063/5.0329188

## Date published

2026-05-25

## Recorded date published

2026-5-25

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Oxygen reduction for p-type TeOx thin-film transistor
  title_type: original
  lang: en

## Description

- description: We investigated p-type TeOx thin films fabricated by vacuum deposition
    using a mixture of TeO2 powder and W powder in Al2O3 crucibles and evaluated its
    thin-film transistor (TFT) characteristics. P-Type TeOx thin films were obtained
    when W was added at a weight ratio of 15% or more relative to TeO2. However, the
    films became insulators and exhibited no electrical conductivity when the ratio
    was 10% or less. X-ray photoelectron spectroscopy analysis revealed that the TeOx
    thin films contained approximately 5% or more Te–Te bonds. Because W–O bonds exhibit
    a higher dissociation energy than Te–O bonds, TeO2 was considered to be reduced
    by W. In addition, W was not present in the film and was used solely for the reduction
    of TeO2. When a W boat was used as the container for heating the evaporation source,
    quantitative analysis of the effects of the reduction by W was difficult. Therefore,
    an Al2O3 crucible, which reacts poorly with TeO2, was used. The results showed
    that when TeOx TFTs are fabricated by vacuum deposition, the addition of an appropriate
    amount of reducing agent to the raw material is essential to form an adequate
    amount of Te–Te bonds.
  description_type: abstract
  lang: und

## Creator

- name: Seiichi Kato
  role: author
  orcid: https://orcid.org/0000-0002-6427-5463
  organization: NIMS
  department: MANA
- name: Masayuki Okamura
  role: author
  orcid: https://orcid.org/0009-0003-3636-6653
  organization: NIMS
  department: MANA
- name: Tomomi Sawada
  role: author
  orcid: https://orcid.org/0000-0002-2335-4480
  organization: NIMS
  department: MANA
- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
  organization: NIMS
  department: MANA
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
  organization: NIMS
  department: MANA

## Contact agent



## Publisher

organization: AIP Publishing
ror: https://ror.org/

## Managing organization



## Keyword

- subject: oxide transistor
  schema: not_defined
- subject: p-type TFT
  schema: not_defined
- subject: TeOx
  schema: not_defined
- subject: BEOL compatible
  schema: not_defined
- subject: reducing agent
  schema: not_defined
- subject: tungsten
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Seiichi Kato, Masayuki Okamura, Tomomi Sawada, Toshihide Nabatame, Kazuhito
    Tsukagoshi; Oxygen reduction for p-type TeOx thin-film transistor. Appl. Phys.
    Lett. 25 May 2026; 128 (21): 212109 and may be found at https://doi.org/10.1063/5.0329188.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '128'
  issue: '21'
  article_number: '212109'

## Conference



## Related item



## Funding

- identifier: 26H0222
  funder_name: KAKENHI
- identifier: 25NM5407
  funder_name: ARIM

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 16373fdc-4509-43dd-81f8-6c140779f471
  filename: article-2026-2-16.pdf
  content_type: application/pdf
  size: 539768
  md5: cdf701a0e930f3b6bfb817046100a1f5

## Thumbnail

fileset_id: 16373fdc-4509-43dd-81f8-6c140779f471
filename: article-2026-2-16.pdf