# Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/cf97396a-8d37-4bcb-9771-012b1cf5d4de

## File

- [Manuscript_final .docx](https://mdr.nims.go.jp/filesets/a83f1ad9-fa10-410f-8976-d78d1af2f25b/download) ([Detail](https://mdr.nims.go.jp/filesets/a83f1ad9-fa10-410f-8976-d78d1af2f25b.md))

## Id

cf97396a-8d37-4bcb-9771-012b1cf5d4de

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-20T08:36:38.735175Z

## Updated at

2024-01-05T13:13:27.937902Z

## Published at

2023-11-28T04:30:18.011998Z

## Doi

https://doi.org/10.48505/nims.4266

## First published url

https://doi.org/10.35848/1882-0786/ac75c8

## Date published

2022-07-01

## Recorded date published

2022-7-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: We demonstrated selective area growth of β-Ga2O3 by HCl-based halide
    vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrates. Perfect
    growth selectivity was achieved under the presence of HCl etching gas in addition
    to the growth precursors. In both substrate cases, (100) facet dominated the grown
    shapes owing to its smallest surface energy density. High-aspect-ratio structures
    having (100) sidewall facets were observed for the stripe windows along [010]
    and [001] directions on the (001) and (010) substrates, respectively. These structures
    may be applicable to trenches and fins used for β-Ga2O3-based power devices.
  description_type: abstract
  lang: eng

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: IOP Publishing

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## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: selective area growth
  schema: not_defined

## Rights

- description: "© 2022 The Japan Society of Applied Physics <br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication/published in Applied
    Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or\r\nany version derived from it. The Version
    of Record is available online at https://doi.org/10.35848/1882-0786/ac75c8."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

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## Embargo



## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '15'
  issue: '7'
  start_page: 75503
  end_page: 75503

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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: a83f1ad9-fa10-410f-8976-d78d1af2f25b
  filename: Manuscript_final .docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 9568718
  md5: 281a9c4ec3e2283029d335cf462e7a93

## Thumbnail

fileset_id: a83f1ad9-fa10-410f-8976-d78d1af2f25b
filename: Manuscript_final .docx