# Fermi energy modulation by tellurium doping of thermoelectric copper(I) iodide

https://mdr.nims.go.jp/datasets/ce680690-f581-44b8-83f7-5907be0e41d8

## File

- [MDR-CuI_Te_implantation_manuscript.docx](https://mdr.nims.go.jp/filesets/5e9507d0-fbf9-45e4-b18b-0f83f7469fa4/download) ([Detail](https://mdr.nims.go.jp/filesets/5e9507d0-fbf9-45e4-b18b-0f83f7469fa4.md))

## Id

ce680690-f581-44b8-83f7-5907be0e41d8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-10-05T12:34:40.660074Z

## Updated at

2024-10-08T07:30:45.112744Z

## Published at

2024-10-08T07:30:45.179938Z

## Doi

https://doi.org/10.48505/nims.4808

## First published url

https://doi.org/10.1016/j.mtphys.2024.101513

## Date published

2024-07-14

## Recorded date published

2024-8

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Fermi energy modulation by tellurium doping of thermoelectric copper(I) iodide
  title_type: original
  lang: en

## Description

- description: There is a current lack of commercial p-type counterpart to state of
    the art n-type transparent conductors. Copper (I) iodide (CuI) is the leading
    p-type candidate, attracting major attention for promising electrical conductivities,
    partially by chalcogenide doping (O, S, Se, Te). Such improvements lead to promising
    future integration of CuI in transparent electronic devices such as thermoelectric
    generators, thin film transistors, and a hole transport layer in perovskite solar
    cells. The role of chalcogenide doping in CuI is to improve the carrier concentration
    in CuI, however, the effect of tellurium is yet to be explored in heavily p-type
    doped CuI. In this work we investigate the role of tellurium in heavily intrinsically
    doped p-type CuI. We report the effects of tellurium doping (up to 2.4 % Te) in
    CuI thin films and study the variation in electrical properties of the material.
    The point defects introduced by ion implantation; the method used to introduce
    the tellurium led to a progressive reduction in the films’ work functions from
    4.9 eV to 4.5 eV. This effect has major repercussions on the other measured electrical
    properties, such as the electrical conductivity, which is decreased by 3 orders
    of magnitude, while the Seebeck coefficient is increased by 80 %. We conduct density
    functional theory calculations to help explicate the effect of tellurium doping
    on the valence band structure of CuI. Consequently, this work shows that the Fermi
    energy in heavily p-type doped CuI can be readily tuned by Te doping.
  description_type: abstract
  lang: und

## Creator

- name: Martin Markwitz
  role: author
- name: Peter P. Murmu
  role: author
- name: Song Yi Back
  role: author
  orcid: https://orcid.org/0009-0000-8890-1484
  organization: National Institute for Materials Science
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science
- name: John V. Kennedy
  role: author
- name: Ben J. Ruck
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

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## Data origin



## Embargo



## Journal

- title: Materials Today Physics
  issn: '25425293'
  volume: '46'
  start_page: 101513
  end_page: 101513
  article_number: '101513'

## Conference



## Related item



## Funding

- funder_name: MBIE
- funder_name: JST-Mirai Program
- funder_name: Royal Society of New Zealand Marsden Fund

## Instrument



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## Fileset

- id: 5e9507d0-fbf9-45e4-b18b-0f83f7469fa4
  filename: MDR-CuI_Te_implantation_manuscript.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 8853077
  md5: 6631f2b7d0f8e4d8f3f8ef1ab6a38bc6

## Thumbnail

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filename: MDR-CuI_Te_implantation_manuscript.docx