# Formation and characterization of Group IV semiconductor nanowires

https://mdr.nims.go.jp/datasets/ce227e92-6456-47ec-9b5e-f9760817e63b

## File

- [MDR_Complete Document for Review_rev.doc](https://mdr.nims.go.jp/filesets/299f5387-edcc-4694-a9d7-9a82d32cb5ee/download) ([Detail](https://mdr.nims.go.jp/filesets/299f5387-edcc-4694-a9d7-9a82d32cb5ee.md))

## Id

ce227e92-6456-47ec-9b5e-f9760817e63b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-09T23:55:06.767861Z

## Updated at

2025-01-04T07:31:01.148879Z

## Published at

2025-01-04T07:31:01.218755Z

## Doi

https://doi.org/10.48505/nims.4439

## First published url

https://doi.org/10.1088/1361-6528/ad15b8

## Date published

2024-03-18

## Recorded date published

2024-3-18

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Formation and characterization of Group IV semiconductor nanowires
  title_type: original
  lang: en

## Description

- description: To enable the application to next-generation devices of semiconductor
    nanowires (NWs), it is important to control their formation and tune their functionality
    by doping and the use of heterojunctions. In this paper, we introduce formation
    and the characterization methods of nanowires, focusing on our research results.
    We describe a top-down method of controlling the size and alignment of nanowires
    that shows advantages over bottom-up growth methods. The latter technique causes
    damage to the nanowire surfaces, requiring defect removal after the NW formation
    process. We show various methods of evaluating the bonding state and electrical
    activity of impurities in NWs. If an impurity is doped in a NW, mobility decreases
    due to the scattering that it causes. As a strategy for solving this problem,
    we describe research into core-shell nanowires, in which Si and Ge heterojunctions
    are formed in the diameter direction inside the NW. This structure can separate
    the impurity-doped region from the carrier transport region, promising as a channel
    for the new ultimate high-mobility transistor.
  description_type: abstract
  lang: eng

## Creator

- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Wipakorn Jevasuwan
  role: author
  orcid: https://orcid.org/0000-0001-9117-2497
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: nanowire
  schema: not_defined
- subject: " doping"
  schema: not_defined
- subject: heterostructure
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-01-04
end_date: 2025-01-04

## Journal

- title: NANOTECHNOLOGY
  issn: '09574484'
  volume: '35'
  issue: '12'
  start_page: 122001
  end_page: 122001

## Conference



## Related item



## Funding

- identifier: 21H04642
  funder_name: JSPS
  description: 基盤研究(A)
- identifier: 20K21135
  funder_name: JSPS
  description: 挑戦的研究(萌芽)

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## Fileset

- id: 299f5387-edcc-4694-a9d7-9a82d32cb5ee
  filename: MDR_Complete Document for Review_rev.doc
  content_type: application/msword
  size: 3666432
  md5: 54628d6322d06e87e6fb26a32670310c

## Thumbnail

fileset_id: 299f5387-edcc-4694-a9d7-9a82d32cb5ee
filename: MDR_Complete Document for Review_rev.doc