# Degradation of vertical GaN diodes during proton and xenon-ion irradiation

https://mdr.nims.go.jp/datasets/cd1d0636-1f8e-456d-9c03-deaa1ed1af7a

## File

- [Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf](https://mdr.nims.go.jp/filesets/6afe2ca4-4658-4758-a0aa-4df0d6a78ce9/download) ([Detail](https://mdr.nims.go.jp/filesets/6afe2ca4-4658-4758-a0aa-4df0d6a78ce9.md))

## Id

cd1d0636-1f8e-456d-9c03-deaa1ed1af7a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-09T08:34:23.258675Z

## Updated at

2024-08-23T23:30:18.108446Z

## Published at

2024-08-23T23:30:18.213062Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/acddb4

## Date published

2023-06-01

## Recorded date published

2023-6-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Degradation of vertical GaN diodes during proton and xenon-ion irradiation
  title_type: original
  lang: en

## Description

- description: We investigated the material stability of a vertical GaN Schottky barrier
    diode (SBD) against proton irradiations by making real-time measurements. The
    reverse current gradually decreased with increasing proton fluence. The current
    of the GaN SBD was reduced by 18% after proton irradiations with a displacement-damage
    dose (Dd) of 1012 MeV/g. We also examined signal and current degradation occurring
    in a vertical GaN-on-GaN p-n diode (PND) during xenon-ion and gamma-ray irradiations.
    The signal gradually decreased with increasing xenon-ion fluence. Xenon-ion irradiations
    of Dd=1012 MeV/g reduced the collected charge in the PND by 11%. This signal degradation
    was close to the current degradation in the GaN SBD caused by the proton irradiations.
    We found that irradiation with Dd > ~1012 MeV/g degraded the performance of the
    GaN devices.
  description_type: abstract
  lang: und

## Creator

- name: Hironori Okumura
  role: author
- name: Yohei Ogawara
  role: author
- name: Manabu Togawa
  role: author
- name: Masaya Miyahara
  role: author
- name: Tadaaki Isobe
  role: author
- name: Kosuke Itabashi
  role: author
- name: Jiro Nishinaga
  role: author
- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Schottky barrier diode
  schema: not_defined
- subject: MOCVD
  schema: not_defined
- subject: Vertical-type PN junction diode
  schema: not_defined
- subject: Proton
  schema: not_defined
- subject: Xe
  schema: not_defined
- subject: Radiation irradiations
  schema: not_defined
- subject: GaN
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '13474065'
  volume: '62'
  issue: '6'
  start_page: 64001
  article_number: '064001'

## Conference



## Related item



## Funding

- funder_name: Murata Science Foundation
- funder_name: Kakehashi

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 6afe2ca4-4658-4758-a0aa-4df0d6a78ce9
  filename: Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf
  content_type: application/pdf
  size: 1100200
  md5: '0098f58d839dd9d5f7c6a1400206a909'

## Thumbnail

fileset_id: 6afe2ca4-4658-4758-a0aa-4df0d6a78ce9
filename: Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf