# Alleviating Defect and Oxidation in Tin Perovskite Solar Cells Using a Bidentate Ligand

https://mdr.nims.go.jp/datasets/cd17d51f-71ae-4f1b-999f-c18c619d9ff9

## File

- [2_Main-CM-Sn-PSCs.pdf](https://mdr.nims.go.jp/filesets/ceb7b6ff-ed37-42ac-9f72-87182ab41293/download) ([Detail](https://mdr.nims.go.jp/filesets/ceb7b6ff-ed37-42ac-9f72-87182ab41293.md))

## Id

cd17d51f-71ae-4f1b-999f-c18c619d9ff9

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-26T09:55:53.423997Z

## Updated at

2024-11-29T07:31:38.832541Z

## Published at

2024-11-29T07:31:38.935615Z

## Doi

https://doi.org/10.48505/nims.5055

## First published url

https://doi.org/10.1021/acs.chemmater.3c00243

## Date published

2023-06-13

## Recorded date published

2023-6-13

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Alleviating Defect and Oxidation in Tin Perovskite Solar Cells Using a Bidentate
    Ligand
  title_type: original
  lang: en

## Description

- description: Tin-perovskite solar cells (Sn-PSCs) have low energy conversion efficiency
    and stability due to facile oxidation of Sn2+ during precursor solution preparation
    and film growth. Herein, we introduced formohydrazide (FHZ) as a bidentate ligand
    into the Sn-halide perovskite (Sn-HaP) to improve the optoelectronic properties.
    This approach is found to be effective for the suppression of Sn-oxidation and
    interfacial energy band modulation. The depth profile distribution confirmed that
    the FHZ additive is primarily located on surfaces and the hole transport layer
    (HTL)/Sn-HaP interface with partly capping at the grain boundaries, which offers
    a reducing ambient in the Sn-HaP film. Therefore, the device with FHZ demonstrated
    a device efficiency of 12.87% (9.93% control) with enhanced open circuit voltage
    from ∼0.734 to 0.874 V and improved operational device stability. The device analysis
    suggests that the FHZ additive alleviates the bulk and interface defect in the
    Sn-PSC with −NH2 and −O═C bidentate bonding to Sn-HaP, which is supported by theoretical
    calculations. Thus, this work corroborates the importance of multidentate ligands
    for modulating the film morphology and defect chemistry in the Sn-perovskite for
    high efficiency and superior device stability.
  description_type: abstract
  lang: und

## Creator

- name: Dhruba B. Khadka
  role: author
  orcid: https://orcid.org/0000-0001-9134-3890
  organization: National Institute for Materials Science
- name: Yasuhiro Shirai
  role: author
  orcid: https://orcid.org/0000-0003-2164-5468
  organization: National Institute for Materials Science
- name: Masatoshi Yanagida
  role: author
  orcid: https://orcid.org/0000-0002-8065-7875
  organization: National Institute for Materials Science
- name: Terumasa Tadano
  role: author
  orcid: https://orcid.org/0000-0002-8132-2161
  organization: National Institute for Materials Science
- name: Kenjiro Miyano
  role: author
  orcid: https://orcid.org/0000-0002-5869-3087
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Tin Perovskite
  schema: not_defined
- subject: Sn oxidation
  schema: not_defined
- subject: Additive Engineering
  schema: not_defined
- subject: Bidentate Molecule
  schema: not_defined

## Rights

- description: This document is the unedited Author’s version of a Submitted Work
    that was subsequently accepted for publication in Chemistry of Materials, copyright
    © 2023 American Chemical Society after peer review. To access the final edited
    and published work see https://doi.org/10.1021/acs.chemmater.3c00243.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Chemistry of Materials
  issn: '15205002'
  volume: '35'
  issue: '11'
  start_page: 4250
  end_page: 4258

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## Funding

- identifier: JPMJMI21E6
  funder_name: Japan Science and Technology Agency

## Instrument



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## Fileset

- id: ceb7b6ff-ed37-42ac-9f72-87182ab41293
  filename: 2_Main-CM-Sn-PSCs.pdf
  content_type: application/pdf
  size: 1395087
  md5: a940f39142ed94ecb25f5446ad6a8c11

## Thumbnail

fileset_id: ceb7b6ff-ed37-42ac-9f72-87182ab41293
filename: 2_Main-CM-Sn-PSCs.pdf