# Gate-Tunable Band Edge in Few-Layer MoS<sub>2</sub>

https://mdr.nims.go.jp/datasets/cd0f85de-f2ca-4963-850b-cd5b78793d7a

## File

- [masseroni-et-al-2025-gate-tunable-band-edge-in-few-layer-mos2.pdf](https://mdr.nims.go.jp/filesets/60d70d26-cd84-4b43-9512-ff1e4d33d776/download) ([Detail](https://mdr.nims.go.jp/filesets/60d70d26-cd84-4b43-9512-ff1e4d33d776.md))

## Id

cd0f85de-f2ca-4963-850b-cd5b78793d7a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-15T08:11:21.046050Z

## Updated at

2026-02-17T23:30:19.194340Z

## Published at

2026-02-17T08:57:19.317441Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.5c01998

## Date published

2025-07-02

## Recorded date published

2025-7-2

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Gate-Tunable Band Edge in Few-Layer MoS<sub>2</sub>
  title_type: original
  lang: en

## Description

- description: The conduction band minima of multilayer molybdenum disulfide (MoS2)
    are expected to be centered at the Q point (midway between the Γ and K points)
    of the hexagonal Brillouin zone. In this study, we conduct magnetotransport experiments
    on four-layer MoS2, revealing highly tunable gate-induced K and Q valley populations.
    By combining our experimental results with a hybrid k · p tight-binding model
    that accounts for interlayer screening effects in a self-consistent manner, we
    demonstrate that the conduction band minima of four-layer MoS2 at low gate bias
    are indeed centered at the Q points. However, as in typical experiments higher
    gate voltages are applied, charge accumulation in the layer adjacent to the positive
    gate electrode leads to a transition of the band edge from the Q points to the
    K points. Additionally, we extend our model to bilayer and three-layer MoS2, successfully
    reconciling previously reported discrepancies between experimental data and density
    functional theory calculations.
  description_type: abstract
  lang: und

## Creator

- name: Michele Masseroni
  role: author
- name: Isaac Soltero
  role: author
- name: James G. McHugh
  role: author
- name: Igor Rozhansky
  role: author
- name: Xue Li
  role: author
- name: Alexander Schmidhuber
  role: author
- name: Markus Niese
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Vladimir I. Fal’ko
  role: author
- name: Thomas Ihn
  role: author
- name: Klaus Ensslin
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 'MoS2
    '
  schema: not_defined
- subject: band edge
  schema: not_defined
- subject: 'gate-tunable
    '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-06-22

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '25'
  issue: '26'
  start_page: 10472
  end_page: 10477

## Conference



## Related item



## Funding

- identifier: EP/S030719/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/V007033/1
  funder_name: Engineering and Physical Sciences Research Council
- funder_name: Eidgen?ssische Technische Hochschule Z?rich
- identifier: LTRSF24/100044
  funder_name: Leverhulme Trust
- funder_name: University of Manchester
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR24A5
  funder_name: Core Research for Evolutional Science and Technology
- funder_name: National Center of Competence in Research Quantum Science and Technology
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: Graphene Flagship
- identifier: '95154'
  funder_name: H2020 European Research Council
- funder_name: Lloyd's Register Foundation

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 60d70d26-cd84-4b43-9512-ff1e4d33d776
  filename: masseroni-et-al-2025-gate-tunable-band-edge-in-few-layer-mos2.pdf
  content_type: application/pdf
  size: 1815417
  md5: b50d4643c8b3bbc5f4349de5691033d3

## Thumbnail

fileset_id: 60d70d26-cd84-4b43-9512-ff1e4d33d776
filename: masseroni-et-al-2025-gate-tunable-band-edge-in-few-layer-mos2.pdf