# Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction

https://mdr.nims.go.jp/datasets/ccc5b57a-fda5-4f5d-8c2d-c52190c5b243

## Files

- [srep31223.pdf](https://mdr.nims.go.jp/filesets/b48e5cdf-f3ff-4c36-b19b-e0e86bad033a/download) ([Detail](https://mdr.nims.go.jp/filesets/b48e5cdf-f3ff-4c36-b19b-e0e86bad033a.md))

## Id

ccc5b57a-fda5-4f5d-8c2d-c52190c5b243

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-28T04:47:00.465486Z

## Updated at

2025-02-28T23:30:20.703833Z

## Published at

2025-02-28T23:30:20.867334Z

## Doi



## First published url

https://doi.org/10.1038/srep31223

## Date published

2016-08-12

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Modulation of electrical potential and conductivity in an atomic-layer semiconductor
    heterojunction
  title_type: original
  lang: en

## Description

- description: We report conductivity enhancement and electrical potential modulation
    of heterojunction interfaces based on TMDC bilayers consisted of MoS2 and WS2.
    Scanning tunneling analyses showed the formation of 1D confining potential in
    the valence (conduction) band, as well as bandgap narrowing around the heterointerface.
    The modulation of electronic properties were also probed as the increase of current
    in conducting atomic force microscopy. The observed band bending can be explained
    by the presence of 1D fixed charges due to piezoelectric interface polarization.
    The present findings indicate that the atomic layer heterojunctions provide a
    novel approach to realizing tunable 1D electrical potential for embedded quantum
    wires and ultrashort barriers of electrical transport.
  description_type: abstract
  lang: und

## Creator

- name: Yu Kobayashi
  role: author
- name: Shoji Yoshida
  role: author
- name: Ryuji Sakurada
  role: author
- name: Kengo Takashima
  role: author
- name: Takahiro Yamamoto
  role: author
- name: Tetsuki Saito
  role: author
- name: Satoru Konabe
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yutaka Maniwa
  role: author
- name: Osamu Takeuchi
  role: author
- name: Hidemi Shigekawa
  role: author
- name: Yasumitsu Miyata
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Semiconductor heterojunction
  schema: not_defined
- subject: transition metal dichalcogenides
  schema: not_defined
- subject: electrical properties
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Scientific Reports
  issn: '20452322'
  volume: '6'
  issue: '1'
  article_number: '31223'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: b48e5cdf-f3ff-4c36-b19b-e0e86bad033a
  filename: srep31223.pdf
  content_type: application/pdf
  size: 1530983
  md5: 7bd8e8b5a53ca2b923b3813c30f51936

## Thumbnail

fileset_id: b48e5cdf-f3ff-4c36-b19b-e0e86bad033a
filename: srep31223.pdf