# Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam

https://mdr.nims.go.jp/datasets/ccbb25c5-3aeb-4f09-9822-9ed2abd26c39

## File

- [Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam.pdf](https://mdr.nims.go.jp/filesets/f7796c8c-3ee8-4dd0-aa5c-fdfa0c8b7973/download) ([Detail](https://mdr.nims.go.jp/filesets/f7796c8c-3ee8-4dd0-aa5c-fdfa0c8b7973.md))

## Id

ccbb25c5-3aeb-4f09-9822-9ed2abd26c39

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-27T07:19:03.900751Z

## Updated at

2026-01-05T04:57:59.995585Z

## Published at

2026-01-05T07:20:04.956581Z

## Doi

https://doi.org/10.48505/nims.6097

## First published url

https://doi.org/10.1109/jeds.2025.3603203

## Date published

2025-08-27

## Recorded date published

2025

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using
    a Monoenergetic Positron Beam
  title_type: original
  lang: en

## Description

- description: Annealing behaviors of vacancy-type defects in Mg and N-implanted GaN
    were studied by positron annihilation. The major defect species in as-implanted
    samples was identified as Ga-vacancy (VGa)-type defects. For Mg-implanted GaN
    with sequential N-implantation after annealing above 1000°C, the defect species
    were vacancy clusters such as (VGaVN)3. Due to the downward shift of the Fermi
    level position resulting from a partial activation of Mg, the charge states of
    defects tended to become positive. For N-implanted GaN, the size of the vacancy
    clusters started to decrease above 1200°C annealing, which was attributed to recombinations
    between N-vacancies coupled with VGas and excess N atoms. The impact of sequential
    N-implantations on vacancies in Mg-implanted GaN was studied, and its effect was
    most effective when the ratio of the concentration of N to that of Mg was three.
  description_type: abstract
  lang: und

## Creator

- name: A. Uedono
  role: author
  orcid: https://orcid.org/0000-0001-6224-4869
- name: R. Tanaka
  role: author
  orcid: https://orcid.org/0000-0002-4058-7649
- name: S. Takashima
  role: author
  orcid: https://orcid.org/0000-0002-3212-4521
- name: K. Ueno
  role: author
- name: M. Edo
  role: author
- name: K. Shima
  role: author
  orcid: https://orcid.org/0000-0003-0967-141X
- name: S. F. Chichibu
  role: author
- name: J. Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: T. Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: S. Ishibashi
  role: author
  orcid: https://orcid.org/0000-0002-4896-3530
- name: K. Sierakowski
  role: author
- name: M. Bockowski
  role: author
  orcid: https://orcid.org/0000-0003-1616-685X

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Data origin



## Embargo



## Journal

- title: IEEE Journal of the Electron Devices Society
  issn: '21686734'
  volume: '13'
  start_page: 1252
  end_page: 1257

## Conference



## Related item



## Funding

- funder_name: NEDO Program for Cross-Ministerial Strategic Innovation Promotion
- identifier: JPJ005357
  funder_name: MEXT Program for Research and Development of Next-Generation Semiconductor
    to Realize Energy-Saving Society
- identifier: JPJ009777
  funder_name: MEXT Program for Creation of Innovative Core Technology for Power Electronics
- identifier: 21H01826
  funder_name: JSPS KAKENHI
- identifier: TECHMATSTRATEG-III/0003/2019-00
  funder_name: Polish National Centre for Research and Development
- identifier: 2018/29/B/ST5/00338
  funder_name: Polish National Science Centre

## Instrument



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## Specimen



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## Fileset

- id: f7796c8c-3ee8-4dd0-aa5c-fdfa0c8b7973
  filename: Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by
    Using a Monoenergetic Positron Beam.pdf
  content_type: application/pdf
  size: 1465989
  md5: b4fe9690f6a28bad5435673b8a17993c

## Thumbnail

fileset_id: f7796c8c-3ee8-4dd0-aa5c-fdfa0c8b7973
filename: Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using
  a Monoenergetic Positron Beam.pdf