# Controlled interlayer exciton ionization in an electrostatic trap in atomically thin heterostructures

https://mdr.nims.go.jp/datasets/cc60e097-3736-412f-a969-3e154d6e5d92

## File

- [s41467-024-51128-9.pdf](https://mdr.nims.go.jp/filesets/71337d65-e3ac-4fad-972f-89e15045509f/download) ([Detail](https://mdr.nims.go.jp/filesets/71337d65-e3ac-4fad-972f-89e15045509f.md))

## Id

cc60e097-3736-412f-a969-3e154d6e5d92

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-05T00:04:38.054855Z

## Updated at

2025-02-05T03:31:21.189827Z

## Published at

2025-02-05T03:31:21.272923Z

## Doi



## First published url

https://doi.org/10.1038/s41467-024-51128-9

## Date published

2024-08-08

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Controlled interlayer exciton ionization in an electrostatic trap in atomically
    thin heterostructures
  title_type: original
  lang: en

## Description

- description: Atomically thin semiconductor heterostructures provide a two-dimensional
    (2D) device platform for creating high densities of cold, controllable excitons.
    Interlayer excitons (IEs), bound electrons and holes localized to separate 2D
    quantum well layers, have permanent out-of-plane dipole moments and long lifetimes,
    tailoring their spatial distribution on demand. Here, we employ electrostatic
    gates to trap IEs and control their density. By electrically modulating IE Stark-shift,
    an electron-hole pair concentration beyond 2×1012 cm-2 can be achieved. At this
    high IE density, we observe an exponentially increasing linewidth broadening indicative
    of an IE ionization transition, independent of the trap depth. This runaway threshold
    remains constant at low temperatures but increases above 20 K, consistent with
    the quantum dissociation of a degenerate IE gas. The deeper understanding of the
    IE ionization phase diagram coupled with the additional tunability via electrostatic
    trapping provide an important step towards creating dipolar exciton condensates
    in atomically thin, solid-state devices.
  description_type: abstract
  lang: und

## Creator

- name: Andrew Y. Joe
  role: author
  orcid: https://orcid.org/0000-0003-4376-7386
- name: Andrés M. Mier Valdivia
  role: author
- name: Luis A. Jauregui
  role: author
  orcid: https://orcid.org/0000-0002-7813-8005
- name: Kateryna Pistunova
  role: author
  orcid: https://orcid.org/0000-0002-3170-1657
- name: Dapeng Ding
  role: author
- name: You Zhou
  role: author
  orcid: https://orcid.org/0000-0002-9854-545X
- name: Giovanni Scuri
  role: author
  orcid: https://orcid.org/0000-0003-1050-3114
- name: Kristiaan De Greve
  role: author
- name: Andrey Sushko
  role: author
- name: Bumho Kim
  role: author
  orcid: https://orcid.org/0000-0002-5671-5641
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: James C. Hone
  role: author
  orcid: https://orcid.org/0000-0002-8084-3301
- name: Mikhail D. Lukin
  role: author
  orcid: https://orcid.org/0000-0002-8658-1007
- name: Hongkun Park
  role: author
  orcid: https://orcid.org/0000-0001-9576-8829
- name: Philip Kim
  role: author
  orcid: https://orcid.org/0000-0002-8255-0086

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Semiconductor heterostructures
  schema: not_defined
- subject: interlayer excitons
  schema: not_defined
- subject: electrostatic gates
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '15'
  issue: '1'
  article_number: '6743'

## Conference



## Related item



## Funding

- identifier: N00014-21-1-2377
  funder_name: United States Department of Defense | United States Navy | Office of
    Naval Research

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



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## Fileset

- id: 71337d65-e3ac-4fad-972f-89e15045509f
  filename: s41467-024-51128-9.pdf
  content_type: application/pdf
  size: 2482302
  md5: 45e7063845876fe85ce3df2440f387f5

## Thumbnail

fileset_id: 71337d65-e3ac-4fad-972f-89e15045509f
filename: s41467-024-51128-9.pdf