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説明:

Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, tailoring their spatial distribution on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating IE Stark-shift, an electron-hole pair concentration beyond 2×1012 cm-2 can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. The deeper understanding of the IE ionization phase diagram coupled with the additional tunability via electrostatic trapping provide an important step towards creating dipolar exciton condensates in atomically thin, solid-state devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Semiconductor heterostructures, interlayer excitons, electrostatic gates

刊行年月日: 2024-08-08

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 15 issue. 1 6743

研究助成金:

• United States Department of Defense | United States Navy | Office of Naval Research N00014-21-1-2377

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-024-51128-9

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更新時刻: 2025-02-05 12:31:21 +0900

MDRでの公開時刻: 2025-02-05 12:31:21 +0900