A. Hötger
;
T. Amit
;
J. Klein
;
K. Barthelmi
;
T. Pelini
;
A. Delhomme
;
S. Rey
;
M. Potemski
;
C. Faugeras
;
G. Cohen
;
D. Hernangómez-Pérez
;
T. Taniguchi
(National Institute for Materials Science)
;
K. Watanabe
(National Institute for Materials Science)
;
C. Kastl
;
J. J. Finley
;
S. Refaely-Abramson
;
A. W. Holleitner
;
A. V. Stier
Description:
(abstract)Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of 2-3nm. The distinct valley- Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates lifting of the spin-degeneracy at zero field. Comparing our results to ab-inito calculations unambiguously identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the spin-defect. These results highlight that defects in 2D semiconductors may be utilized for quantum technologies.
Rights:
Keyword: Spin-defects, magneto-photoluminescence, sulfur vacancies
Date published: 2023-04-08
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/s41699-023-00392-2
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-02-23 22:48:02 +0900
Published on MDR: 2025-02-23 22:48:02 +0900
Filename | Size | |||
---|---|---|---|---|
Filename |
s41699-023-00392-2.pdf
(Thumbnail)
application/pdf |
Size | 1.74 MB | Detail |