A. Hötger
;
T. Amit
;
J. Klein
;
K. Barthelmi
;
T. Pelini
;
A. Delhomme
;
S. Rey
;
M. Potemski
;
C. Faugeras
;
G. Cohen
;
D. Hernangómez-Pérez
;
T. Taniguchi
(National Institute for Materials Science
)
;
K. Watanabe
(National Institute for Materials Science
)
;
C. Kastl
;
J. J. Finley
;
S. Refaely-Abramson
;
A. W. Holleitner
;
A. V. Stier
説明:
(abstract)Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of 2-3nm. The distinct valley- Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates lifting of the spin-degeneracy at zero field. Comparing our results to ab-inito calculations unambiguously identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the spin-defect. These results highlight that defects in 2D semiconductors may be utilized for quantum technologies.
権利情報:
キーワード: Spin-defects, magneto-photoluminescence, sulfur vacancies
刊行年月日: 2023-04-08
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s41699-023-00392-2
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-23 22:48:02 +0900
MDRでの公開時刻: 2025-02-23 22:48:02 +0900
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