Article Spin-defect characteristics of single sulfur vacancies in monolayer MoS2

A. Hötger ; T. Amit ; J. Klein ; K. Barthelmi ; T. Pelini ; A. Delhomme ; S. Rey ; M. Potemski ; C. Faugeras ; G. Cohen ; D. Hernangómez-Pérez ; T. Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; K. Watanabe SAMURAI ORCID (National Institute for Materials Science) ; C. Kastl ; J. J. Finley ; S. Refaely-Abramson ; A. W. Holleitner ; A. V. Stier

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A. Hötger, T. Amit, J. Klein, K. Barthelmi, T. Pelini, A. Delhomme, S. Rey, M. Potemski, C. Faugeras, G. Cohen, D. Hernangómez-Pérez, T. Taniguchi, K. Watanabe, C. Kastl, J. J. Finley, S. Refaely-Abramson, A. W. Holleitner, A. V. Stier. Spin-defect characteristics of single sulfur vacancies in monolayer MoS2. npj 2D Materials and Applications. 2023, 7 (1), 30.
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(abstract)

Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of 2-3nm. The distinct valley- Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates lifting of the spin-degeneracy at zero field. Comparing our results to ab-inito calculations unambiguously identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the spin-defect. These results highlight that defects in 2D semiconductors may be utilized for quantum technologies.

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Keyword: Spin-defects, magneto-photoluminescence, sulfur vacancies

Date published: 2023-04-08

Publisher: Springer Science and Business Media LLC

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  • npj 2D Materials and Applications (ISSN: 23977132) vol. 7 issue. 1 30

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1038/s41699-023-00392-2

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Updated at: 2025-02-23 22:48:02 +0900

Published on MDR: 2025-02-23 22:48:02 +0900

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