Proceedings Long-Term Metastability of Light-Induced Defects in Hydrogenated Amorphous Silicon — Further Investigations

Kazuo MORIGAKI (ISSP, Univ. of Tokyo) ; Chisato NIIKURA SAMURAI ORCID (Research Center for Macromolecules and Biomaterials/Macromolecules Field/Printed Electronics Group, National Institute for Materials ScienceROR) ; Chisato OGIHARA (Yamaguchi University) ; Kosei TAKEDA (Tokai University)

Proc. Sch. Sci. TOKAI UNIV. vol59_p1-4 (2024).pdf
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Kazuo MORIGAKI, Chisato NIIKURA, Chisato OGIHARA, Kosei TAKEDA. Long-Term Metastability of Light-Induced Defects in Hydrogenated Amorphous Silicon — Further Investigations. https://doi.org/10.18995/24352640.59.1
SAMURAI

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(abstract)

The peak intensity of the electron spin resonance signal due to silicon-dangling bonds in
a-Si:H has been measured at room temperature as a function of time during 6.5 x 10^3 days
after the intense pulsed illumination was turned off. The decay curve is fitted by an exponential function with a decay constant of 393 days and reaches a steady-state value smaller
than the value taken before illumination. Such a long-term metastability of light-induced
dangling bonds is interpreted in term of reconstruction of the amorphous network occurring
through hydrogen motion.

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Keyword: Amorphous silicon, Defects, Electron spin resonance, Intense pulsed illumination, Long-term metastability of light-induced defects

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Publisher: 東海大学理学部

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  • Proceedings of the School of Science of Tokai University (ISSN: 24352640) vol. 59

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.18995/24352640.59.1

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Updated at: 2024-12-09 16:30:16 +0900

Published on MDR: 2024-12-09 16:30:17 +0900

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