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説明:

The peak intensity of the electron spin resonance signal due to silicon-dangling bonds in
a-Si:H has been measured at room temperature as a function of time during 6.5 x 10^3 days
after the intense pulsed illumination was turned off. The decay curve is fitted by an exponential function with a decay constant of 393 days and reaches a steady-state value smaller
than the value taken before illumination. Such a long-term metastability of light-induced
dangling bonds is interpreted in term of reconstruction of the amorphous network occurring
through hydrogen motion.

権利情報:

• In Copyright
  

キーワード: Amorphous silicon, Defects, Electron spin resonance, Intense pulsed illumination, Long-term metastability of light-induced defects

刊行年月日:

出版者: 東海大学理学部

掲載誌:

• Proceedings of the School of Science of Tokai University (ISSN: 24352640) vol. 59

会議:

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.18995/24352640.59.1

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更新時刻: 2024-12-09 16:30:16 +0900

MDRでの公開時刻: 2024-12-09 16:30:17 +0900