# Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam 

https://mdr.nims.go.jp/datasets/caf8f815-0615-4121-a4ed-f33f0507f0b2

## File

- [JSA_Vol25_14-20.pdf](https://mdr.nims.go.jp/filesets/2ba878e2-4763-42c8-a465-130537963245/download) ([Detail](https://mdr.nims.go.jp/filesets/2ba878e2-4763-42c8-a465-130537963245.md))

## Id

caf8f815-0615-4121-a4ed-f33f0507f0b2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2021-08-05T16:24:14.832468Z

## Updated at

2024-01-05T13:13:23.738999Z

## Published at

2021-08-13T18:55:24.268454Z

## Doi



## First published url

https://doi.org/10.1384/jsa.25.14

## Date published

2019-03-31

## Recorded date published

2018

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: 'Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra
    Low Angle Incidence Ion Beam '
  title_type: original
  lang: en

## Description

- description: "磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために，極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5
    kVおよび3.0 kVのスパッタ条件で分析を行った．その結果，イオン加速電圧0.5 kVでは多層薄膜の本来の構造を反映した対称的な B のオージェデプスプロファイルが得られることがわかった．イオン加速電圧3.0
    kVのデプスプロファイルは，イオン加速電圧0.5 kVのそれに比べて深さ分解能は劣るが，多層薄膜が持つ本来の対称的な構造を短時間で評価できた．一方，アトムプローブ・トモグラフィーにより同試料を測定した結果，一次元濃度プロファイルは，合金と比べて電界蒸発のしきい値の高い
    B が遅れて検出されるため本来の多層薄膜の対称的な構造と異なる非対称なアーティファクト構造が見られることがわかった．\r\nWe have investigated
    the Auger depth profiling analysis for magnetic head materials of FeNi:5 nm/CoFeB:3
    nm/FeN:10 nm by the glancing-angle Ar ion beam sputtering method at an incident
    angle of 7 degree from the sample surface. Auger depth profile with the ion beam
    at acceleration voltage of 0.5 kV quantitatively evaluated the original symmetrical
    distri-bution of B in the multilayered thin film. The Auger depth profile at the
    ion acceleration voltage of 3.0 kV also evaluated the original symmetrical distribution
    in a shorter time although its depth resolution was lower than that of the ion
    accelera-tion voltage of 0.5 kV. In contrast, as a result of measuring the same
    sample by atom probe tomography, one-dimensional concentration profile of B was
    artificially asymmetrical caused by the larger threshold voltage of high electric
    field evapo-ration of B than those of alloy components."
  description_type: abstract
  lang: en

## Creator

- name: Ogiwara, Toshiya
  role: author
  orcid: https://orcid.org/0000-0002-7376-6571
- name: Yanagiuchi, Katsuaki
  role: author
  orcid: https://orcid.org/0000-0002-3882-8052
- name: Yoshikawa, Hideki
  role: author
  orcid: https://orcid.org/0000-0002-7389-8865

## Contact agent



## Publisher

organization: Surface Analysis Society of Japan

## Managing organization



## Keyword

- subject: Ultra Low Angle Incidence Ion Beam
  schema: not_defined
- subject: FeNi/CoFeB/FeNi Thin Film
  schema: not_defined
- subject: Auger Depth Profiling Analysis
  schema: not_defined

## Rights



## Other identifier(s)



## Data origin



## Embargo



## Journal



## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 2ba878e2-4763-42c8-a465-130537963245
  filename: JSA_Vol25_14-20.pdf
  content_type: application/pdf
  size: 715953
  md5: 96b0a2b00169f3e65468bfafd1922d97

## Thumbnail

fileset_id: 2ba878e2-4763-42c8-a465-130537963245
filename: JSA_Vol25_14-20.pdf