# Effect of plasma-cracked sulfur on the growth of tin-sulfide thin films by molecular beam deposition

https://mdr.nims.go.jp/datasets/cad98a32-203b-4ea9-af34-e5a02b790258

## File

- [UNMARKED_rev2_JJAP-SI_EMNANO2025_MTMR.docx](https://mdr.nims.go.jp/filesets/952b5a4e-5feb-4cf4-b24e-3538b4eb1b53/download) ([Detail](https://mdr.nims.go.jp/filesets/952b5a4e-5feb-4cf4-b24e-3538b4eb1b53.md))

## Id

cad98a32-203b-4ea9-af34-e5a02b790258

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-18T00:02:00.430506Z

## Updated at

2025-10-16T05:01:13.337193Z

## Published at

2026-08-10T23:25:49.135410Z

## Doi

https://doi.org/10.48505/nims.5815

## First published url

https://doi.org/10.35848/1347-4065/adf3be

## Date published

2025-08-01

## Recorded date published

2025-8-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Effect of plasma-cracked sulfur on the growth of tin-sulfide thin films by
    molecular beam deposition
  title_type: original
  lang: en

## Description

- description: 'In this study, we have investigated the growth behavior of SnSₓ thin
    films by molecular beam deposition using a plasma-cracked sulfur source to explore
    the influence of sulfur chemical activity on phase formation and stability. Plasma
    activation of elemental sulfur enabled the successful formation of stoichiometric
    and crystalline SnS at moderate substrate temperatures, while uncracked S₈ resulted
    in sulfur-deficient films. Furthermore, under higher sulfur flux and lower thermal
    budget, crystalline SnS₂ formation was observed. The phase selectivity was systematically
    evaluated through Raman spectroscopy, X-ray diffraction, and AES, and the desorption
    behavior of SnS correlated well with reported vapor pressure data. These findings
    demonstrate that plasma cracking enhances sulfur reactivity and enables access
    to distinct tin sulfide phases depending on growth conditions. These results and
    discussions provide a basis for understanding SnSx thin-film growth and points
    toward future development of phase-selective IV-VI chalcogenide thin-film growth
    technique. '
  description_type: abstract
  lang: und

## Creator

- name: Ryo Matsumura
  role: author
  orcid: https://orcid.org/0000-0003-2303-4978
- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: germanium sulfide
  schema: not_defined

## Rights

- description: 'This is the Accepted Manuscript version of an article accepted for
    publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or any
    version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/adf3be. '
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-08-11
end_date: 2026-08-11

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '8'

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## Funding

- identifier: JP20K14796
  funder_name: JSPS
  description: GeSn/Ge縦型ヘテロ接合ナノワイヤの実現と次世代トランジスタへの応用
- identifier: JP21H04642
  funder_name: JSPS
  description: Si-Ge系ヘテロ接合ナノワイヤによる縦型ナノワイヤHEMTデバイスの開発
- identifier: JP23K13370
  funder_name: JSPS
  description: '光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用 '

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## Fileset

- id: 952b5a4e-5feb-4cf4-b24e-3538b4eb1b53
  filename: UNMARKED_rev2_JJAP-SI_EMNANO2025_MTMR.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 35000612
  md5: d3d647351139ab0e7d44941efc69eb4f

## Thumbnail

fileset_id: 952b5a4e-5feb-4cf4-b24e-3538b4eb1b53
filename: UNMARKED_rev2_JJAP-SI_EMNANO2025_MTMR.docx