# Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

https://mdr.nims.go.jp/datasets/cabd5085-406a-42a3-a6d4-86fed2e9c6df

## File

- [s41699-023-00435-8.pdf](https://mdr.nims.go.jp/filesets/9140c69d-16f7-4b47-9ae0-54b22ca039ce/download) ([Detail](https://mdr.nims.go.jp/filesets/9140c69d-16f7-4b47-9ae0-54b22ca039ce.md))

## Id

cabd5085-406a-42a3-a6d4-86fed2e9c6df

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T04:53:04.189490Z

## Updated at

2025-02-23T13:47:52.840492Z

## Published at

2025-02-23T13:47:52.903160Z

## Doi



## First published url

https://doi.org/10.1038/s41699-023-00435-8

## Date published

2023-11-21

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals
    material
  title_type: original
  lang: en

## Description

- description: Sunlight is widely seen as one of the most abundant forms of renewable
    energy, with photovoltaic cells based on pn juntions being the most commonly used
    platform attempting to harness it. Unlike in conventional photovoltaic cells,
    the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent
    and photovoltage in single materials, without the need to engineer a pn junction
    and to create a built-in electric field, thus offering a solution that can potentially
    exceed the Shockley–Queisser efficiency limit. However, it requires a material
    with no inversion symmetry and is therefore absent in centrosymmetric materials.
    Here, we demonstrate that breaking the inversion symmetry by structural disorder
    can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals
    material. Homogenous illumination of defective PtSe2 by linearly and circularly
    polarized light results in a photoresponse termed as linear photogalvanic effect
    (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the
    pristine crystal. First-principles calculations reveal that LPGE originates from
    Se vacancies that act as asymmetric scattering centers for the photo-generated
    electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic
    functionality in centrosymmetric materials and shows how the range of materials
    suitable for light sensing and energy-harvesting applications can be extended.
  description_type: abstract
  lang: und

## Creator

- name: Cheol-Yeon Cheon
  role: author
- name: Zhe Sun
  role: author
- name: Jiang Cao
  role: author
- name: Juan Francisco Gonzalez Marin
  role: author
- name: Mukesh Tripathi
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Mathieu Luisier
  role: author
- name: Andras Kis
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Bulk photovoltaic effect
  schema: not_defined
- subject: PtSe2
  schema: not_defined
- subject: structural disorder
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: npj 2D Materials and Applications
  issn: '23977132'
  volume: '7'
  issue: '1'
  article_number: '74'

## Conference



## Related item



## Funding

- identifier: '175822'
  funder_name: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen
    Forschung

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## Fileset

- id: 9140c69d-16f7-4b47-9ae0-54b22ca039ce
  filename: s41699-023-00435-8.pdf
  content_type: application/pdf
  size: 2519343
  md5: e8b8ac392228c5c2c6878176b3399daf

## Thumbnail

fileset_id: 9140c69d-16f7-4b47-9ae0-54b22ca039ce
filename: s41699-023-00435-8.pdf