# Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy https://mdr.nims.go.jp/datasets/ca705cd9-bf97-46d7-be14-60b05606111e ## File - [Appl.Phys.Lett.127.252102_2025.pdf](https://mdr.nims.go.jp/filesets/92ec417f-913b-4f33-9a02-f7a94bdd1b7c/download) ([Detail](https://mdr.nims.go.jp/filesets/92ec417f-913b-4f33-9a02-f7a94bdd1b7c.md)) ## Id ca705cd9-bf97-46d7-be14-60b05606111e ## Local identifier ## Visibility open_to_public ## State published ## Created at 2025-12-23T08:34:03.251746Z ## Updated at 2025-12-24T08:24:27.442548Z ## Published at 2025-12-24T23:19:48.099475Z ## Doi https://doi.org/10.48505/nims.6066 ## First published url https://doi.org/10.1063/5.0295643 ## Date published 2025-12-22 ## Recorded date published 2025-12-22 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy title_type: original lang: en ## Description - description: We deposited a highly oriented MoS2 film on a 2-inch amorphous-Al2O3 (0001) wafer by metal-organic chemical vapor deposition and determined the atomic configuration of the MoS2/amorphous-Al2O3 (0001) stacking structure by performing atomic resolution electron microscopy observations along two orthogonal zone axis directions, i.e., the 〈112 ̅0〉 and 〈11 ̅00〉 directions of amorphous-Al2O3. The results show that, first, the in-plane positions of Mo atoms coincide with those of the underlying Al and O atoms, and the [112 ̅0] direction of monolayer 2H-MoS2 matches that of the amorphous-Al2O3 substrate. Second, the amorphous-Al2O3 surface was a reconstructed Al-I structure. Moreover, we performed the first-principles calculations using the observed in-plane atomic positions of the MoS2/amorphous-Al2O3 structure as a starting configuration and found that the MoS2-Al2O3 distance is larger than the theoretical van der Waals distance. Because no ordered structures were observed between the MoS2 film and the Al2O3 substrate, the experimental and theoretical results strongly suggest that an amorphous interface layer exists between them. Such an amorphous interface layer is likely to weaken the MoS2-Al2O3 interaction that determines the stability of the MoS2/amorphous-Al2O3 (0001) structure. We thus argue that controlling the interface layer is critical in fabricating highly oriented MoS2 films and is vital for improving the performance of field-effect transistors with MoS2 channels. description_type: abstract lang: eng ## Creator - name: Emi Kano role: author organization: Nagoya University - name: Jun Nara role: author orcid: https://orcid.org/0000-0002-0486-2981 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Quantum Materials Simulation Group - name: Koki Takenaka role: author organization: Graduate School of Engineering, Nagoya University - name: Toshiki Yasuno role: author organization: Graduate School of Engineering, Nagoya University - name: Keisuke Atsumi role: author organization: Department of Materials Engineering, The University of Tokyo - name: Shuhong Shuhong Li role: author organization: Department of Materials Engineering, The University of Tokyo - name: Tomonori Nishimura role: author organization: Department of Materials Engineering, The University of Tokyo - name: Kaito Kanahashi role: author organization: Department of Materials Engineering, The University of Tokyo - name: Jun Uzuhashi role: author orcid: https://orcid.org/0000-0003-2023-8158 organization: National Institute for Materials Science department: Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Electron Microscopy Unit - name: Kosuke Nagashio role: author organization: Department of Materials Engineering, The University of Tokyo - name: Yoshiki Sakuma role: author orcid: https://orcid.org/0000-0001-6804-7217 organization: National Institute for Materials Science department: Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group - name: Nobuyuki Ikarashi role: author organization: Nagoya University ## Contact agent ## Publisher organization: American Institute of Physics ## Managing organization ## Keyword - subject: MoS2 schema: not_defined - subject: sapphire schema: not_defined ## Rights - description: 'This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Emi Kano, Jun Nara, Koki Takenaka, Toshiki Yasuno, Keisuke Atsumi, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, Jun Uzuhashi, Kosuke Nagashio, Yoshiki Sakuma, Nobuyuki Ikarashi; Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy. Appl. Phys. Lett. 22 December 2025; 127 (25): 252102. and may be found at https://doi.org/10.1063/5.0295643' identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo ## Journal - title: APPLIED PHYSICS LETTERS issn: '00036951' volume: '127' issue: '25' article_number: '252102' ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 92ec417f-913b-4f33-9a02-f7a94bdd1b7c filename: Appl.Phys.Lett.127.252102_2025.pdf content_type: application/pdf size: 1151411 md5: 5643bc9dcbe429c65b8bba859a30aba4 ## Thumbnail fileset_id: 92ec417f-913b-4f33-9a02-f7a94bdd1b7c filename: Appl.Phys.Lett.127.252102_2025.pdf