# Ultrafast response of spontaneous photovoltaic effect in 3R-MoS            <sub>2</sub>            –based heterostructures

https://mdr.nims.go.jp/datasets/c8f76296-9bfe-47c0-a5b6-977db03a7fc0

## File

- [sciadv.ade3759.pdf](https://mdr.nims.go.jp/filesets/3e63d077-999c-4cc1-8231-bc0aca4ac998/download) ([Detail](https://mdr.nims.go.jp/filesets/3e63d077-999c-4cc1-8231-bc0aca4ac998.md))

## Id

c8f76296-9bfe-47c0-a5b6-977db03a7fc0

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T01:37:06.164476Z

## Updated at

2025-02-23T13:46:41.414780Z

## Published at

2025-02-23T13:46:41.523709Z

## Doi



## First published url

https://doi.org/10.1126/sciadv.ade3759

## Date published

2022-12-16

## Recorded date published

2022-12-16

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Ultrafast response of spontaneous photovoltaic effect in 3R-MoS
                <sub>2</sub>
                –based heterostructures
  title_type: original
  lang: en

## Description

- description: Ferroelectric 3R-MoS2 has been shown to exhibit spontaneous polarization
    down to bilayer, and can sustain a strong depolarization field when sandwiched
    between graphene electrodes. This property gives rise to highly efficient photovoltaic-current
    generation without needing heterostructures or p-n junctions. In this work, we
    study the photovoltaic-current dynamics in 3R-MoS2 photodetectors and identify
    a strong thermal saturation of the photocurrent upon ultrafast laser heating.
    In addition, we developed a photocurrent cross-correlation technique to deconvolute
    the thermal saturation and charge-transfer processes, revealing the multi-component
    nature of the photocurrent dynamics. The fastest component approaches the limit
    of charge transfer dynamics at the graphene-MoS2 interface. This work demonstrates
    a novel method to study ultrafast photocurrent speed, and supports the use of
    ferroelectric van der Waals materials for future high-performance optoelectronic
    applications.
  description_type: abstract
  lang: und

## Creator

- name: Jingda Wu
  role: author
- name: Dongyang Yang
  role: author
- name: Jing Liang
  role: author
- name: Max Werner
  role: author
- name: Evgeny Ostroumov
  role: author
- name: Yunhuan Xiao
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Jerry I. Dadap
  role: author
- name: David Jones
  role: author
- name: Ziliang Ye
  role: author

## Contact agent



## Publisher

organization: American Association for the Advancement of Science (AAAS)

## Managing organization



## Keyword

- subject: 3R-MoS2
  schema: not_defined
- subject: Spontaneous polarization
  schema: not_defined
- subject: photovoltaic effect
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Science Advances
  issn: '23752548'
  volume: '8'
  issue: '50'
  article_number: eade3759

## Conference



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## Instrument



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## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 3e63d077-999c-4cc1-8231-bc0aca4ac998
  filename: sciadv.ade3759.pdf
  content_type: application/pdf
  size: 797067
  md5: 00ee4d45762d38a415cfbd203c93bf9f

## Thumbnail

fileset_id: 3e63d077-999c-4cc1-8231-bc0aca4ac998
filename: sciadv.ade3759.pdf