# Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

https://mdr.nims.go.jp/datasets/c852ae1e-0f27-4102-a12e-e9a012bdb8c5

## File

- [5174103.pdf](https://mdr.nims.go.jp/filesets/570a80b8-e2b1-4113-b506-9b7c81808438/download) ([Detail](https://mdr.nims.go.jp/filesets/570a80b8-e2b1-4113-b506-9b7c81808438.md))

## Id

c852ae1e-0f27-4102-a12e-e9a012bdb8c5

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-19T08:28:35.871813Z

## Updated at

2025-02-23T13:49:24.072633Z

## Published at

2025-02-23T13:49:24.145058Z

## Doi



## First published url

https://doi.org/10.1155/2018/5174103

## Date published

2018-05-14

## Recorded date published

2018

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer
  title_type: original
  lang: en

## Description

- description: 'We investigate the energy relaxation of hot carriers in a CVD-grown
    graphene device with a top h-BN layer by driving the devices into the non-equilibrium
    regime. By using the magnetic field dependent conductance fluctuations of our
    graphene device as a self-thermometer, we can determine the effective carrier
    temperature Te at various driving current I while keeping the lattice temperature
    TL fixed. Interestingly, it is found that Te is proportional to I, indicative
    little electron-phonon scattering in our device. Furthermore the average rate
    of energy loss per carrier Pe is proportional to (Te2-TL2), suggestive the heat
    diffusion rather than acoustic phonon processes in our system. '
  description_type: abstract
  lang: und

## Creator

- name: C. Chuang
  role: author
- name: M. Mineharu
  role: author
- name: N. Matsumoto
  role: author
- name: M. Matsunaga
  role: author
- name: C.-W. Liu
  role: author
- name: B.-Y. Wu
  role: author
- name: Gil-Ho Kim
  role: author
- name: L.-H. Lin
  role: author
- name: Y. Ochiai
  role: author
- name: K. Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: T. Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: C.-T. Liang
  role: author
- name: N. Aoki
  role: author

## Contact agent



## Publisher

organization: Hindawi Limited

## Managing organization



## Keyword

- subject: Hot carriers
  schema: not_defined
- subject: CVD graphene
  schema: not_defined
- subject: energy relaxation
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Nanomaterials
  issn: '16874110'
  volume: '2018'
  issue: '1'
  start_page: 1
  end_page: 7
  article_number: '5174103'

## Conference



## Related item



## Funding

- identifier: MOST 106-2811-M-001-164
  funder_name: Academia Sinica
- identifier: MOST 105-2119-M-002-048-MY3
  funder_name: Academia Sinica
- identifier: JP16H00899
  funder_name: Academia Sinica

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 570a80b8-e2b1-4113-b506-9b7c81808438
  filename: 5174103.pdf
  content_type: application/pdf
  size: 2244922
  md5: f1ae97cc1258a07168e7000a9abb6ed9

## Thumbnail

fileset_id: 570a80b8-e2b1-4113-b506-9b7c81808438
filename: 5174103.pdf