# Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire

https://mdr.nims.go.jp/datasets/c7a13968-c1ba-498d-a3d0-9a87b9843d82

## File

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## Id

c7a13968-c1ba-498d-a3d0-9a87b9843d82

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-01-14T01:47:01.642503Z

## Updated at

2026-01-14T04:07:15.940482Z

## Published at

2026-01-14T07:22:15.939951Z

## Doi



## First published url

https://doi.org/10.1063/5.0303598

## Date published

2026-01-14

## Recorded date published

2026-1-14

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire
  title_type: original
  lang: en

## Description

- description: Highly-oriented MoS2 monolayer (ML) on the sapphire(0001) substrate
    were grown by metal-organic chemical vapor deposition. The epitaxial configuration
    of ML- MoS2/sapphire has been studied using low-energy electron diffraction (LEED)
    combined with first-principles calculations. LEED analysis based on the dynamical
    diffraction theory revealed that the MoS2 ML is grown with the epitaxial relationship
    of MoS2 [1120] // Al2O3 [1120] and MoS2 [1100] // Al2O3 [1100], and that the formation
    of antiparallel (inversion) domains is effectively suppressed. The observed epitaxial
    relationship is insensitive to the direction of surface steps on the sapphire
    substrate.
  description_type: abstract
  lang: und

## Creator

- name: Akihiro Ohtake
  role: author
  orcid: https://orcid.org/0000-0002-3519-4613
- name: Jun Nara
  role: author
  orcid: https://orcid.org/0000-0002-0486-2981
- name: Yoshiki Sakuma
  role: author
  orcid: https://orcid.org/0000-0001-6804-7217

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: " transition-metal dichalcogenide"
  schema: not_defined
- subject: low-energy electron diffraction
  schema: not_defined
- subject: epitaxial growth
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '139'
  issue: '2'
  article_number: '024303'

## Conference



## Related item



## Funding

- identifier: JP23K04592
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJCR24A3
  funder_name: Core Research for Evolutional Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 71c5dcd0-9802-4361-ae6c-6dbbd5518d92
  filename: SM.pdf
  content_type: application/pdf
  size: 2929940
  md5: fca3866b66d976353e2123730b8c2a23
- id: 69992250-1f69-46e8-8472-69d31a23243b
  filename: 024303_1_5.0303598.pdf
  content_type: application/pdf
  size: 2842580
  md5: e47df6b726f1b939add5c30fc03fb662

## Thumbnail

fileset_id: 71c5dcd0-9802-4361-ae6c-6dbbd5518d92
filename: SM.pdf