# Step-and-terrace surface formation on (−112) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    via thermal annealing

https://mdr.nims.go.jp/datasets/c6a19f22-e9aa-425d-9f06-7d4783fa3814

## File

- [Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing-annotated.pdf](https://mdr.nims.go.jp/filesets/15964676-374c-47b3-aaa7-ba52e3a4d8f3/download) ([Detail](https://mdr.nims.go.jp/filesets/15964676-374c-47b3-aaa7-ba52e3a4d8f3.md))

## Id

c6a19f22-e9aa-425d-9f06-7d4783fa3814

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-09-12T13:30:54.847543Z

## Updated at

2026-09-14T00:13:42.298194Z

## Published at

2026-09-14T01:23:52.297756Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/aea1b2

## Date published

2026-09-15

## Recorded date published

2026-9-15

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Step-and-terrace surface formation on (−112) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    via
    thermal annealing
  title_type: original
  lang: en

## Description

- description: Step-and-terrace formation on a (−112) β-Ga2O3 substrate subjected
    to chemical mechanical polishing was investigated by thermal annealing and subsequent
    wet-chemical treatments. Atomic force microscopy revealed that annealing at approximately
    1000 °C produced a well-defined stepped morphology with predominantly monolayer
    steps about 0.2 nm high, consistent with the 0.210 nm spacing between adjacent
    (−112) planes. In contrast, treatments with hydrofluoric acid, a sulfuric acid–hydrogen
    peroxide mixture, and tetramethylammonium hydroxide degraded the thermally formed
    stepped morphology. These results demonstrate that thermal annealing is effective
    for preparing ordered (−112) β-Ga2O3 surfaces and provide guidance for future
    pre- and post-treatment processes.
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '65'
  issue: '17'
  article_number: '178001'

## Conference



## Related item



## Funding

- identifier: JPNP22007
  funder_name: New Energy and Industrial Technology Development Organization
- identifier: JP24K01368
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 15964676-374c-47b3-aaa7-ba52e3a4d8f3
  filename: Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O
    3 via thermal annealing-annotated.pdf
  content_type: application/pdf
  size: 1529622
  md5: 4502923de34a3c61b96f6a083e66c93b

## Thumbnail

fileset_id: 15964676-374c-47b3-aaa7-ba52e3a4d8f3
filename: Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O 3
  via thermal annealing-annotated.pdf