# Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures

https://mdr.nims.go.jp/datasets/c5af70b0-f67c-45ac-9d74-880f48a43ab1

## File

- [acsnano.3c03261.pdf](https://mdr.nims.go.jp/filesets/e3d94cf0-0a52-47e2-8789-83693a5f42ee/download) ([Detail](https://mdr.nims.go.jp/filesets/e3d94cf0-0a52-47e2-8789-83693a5f42ee.md))

## Id

c5af70b0-f67c-45ac-9d74-880f48a43ab1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-13T07:22:18.863901Z

## Updated at

2025-02-14T03:31:01.544175Z

## Published at

2025-02-14T03:31:01.632648Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.3c03261

## Date published

2023-06-27

## Recorded date published

2023-6-27

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy
    of van der Waals Heterostructures
  title_type: original
  lang: en

## Description

- description: Van der Waals heterostructures (vdW-HS) allow the integration of dissimilar
    materials to form complex devices. These devices commonly rely on the careful
    manipulation of charges in and across multiple materials and interfaces. However,
    at present, submicron variations in strain, doping or electrical breakages may
    exist undetected within a device, adversely affecting macroscale performance.
    Here we propose the use of conductive mode and cathodoluminescence scanning electron
    microscopy (CM-SEM and SEM-CL respectively) to investigate these phenomena. As
    a model system, we study a sample of monolayer WSe2 encapsulated in hexagonal
    boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons
    out of a sample during SEM measurements. Through this, we reveal during electron
    irradiation that, at 5 keV, up to 70% of beam electrons are deposited into the
    vdW-HS and can subsequently transfer into the WSe2. We then demonstrate this accumulation
    of charge leads to dynamic doping of WSe2, reducing its CL efficiency by up to
    30% over 30 s. Finally, we show by providing a path for excess electrons to leave
    the sample, near full restoration of the initial CL signal can be achieved. These
    results indicate trapping of charges in vdW-HS during electron irradiation must
    be considered to obtain and maintain optimal performance of vdW-HS devices during
    processes such as e-beam lithography or SEM. We also demonstrate CM-SEM and SEM-CL
    form a toolkit through which nanoscale characterisation of vdW-HS devices can
    be performed, allowing electrical and optical properties to be correlated.
  description_type: abstract
  lang: und

## Creator

- name: Hugh Ramsden
  role: author
- name: Soumya Sarkar
  role: author
- name: Yan Wang
  role: author
- name: Yiru Zhu
  role: author
- name: James Kerfoot
  role: author
- name: Evgeny M. Alexeev
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Sefaattin Tongay
  role: author
- name: Andrea C. Ferrari
  role: author
- name: Manish Chhowalla
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Van der Waals heterostructures
  schema: not_defined
- subject: conductive mode
  schema: not_defined
- subject: cathodoluminescence
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '17'
  issue: '12'
  start_page: 11882
  end_page: 11891

## Conference



## Related item



## Funding

- funder_name: GIPT
- funder_name: CHARM EU
- funder_name: FP7 Information and Communication Technologies
- identifier: EP/K01711X/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/K017144/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/L016087/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/N010345/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/T001038/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/T026200/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/V000055/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: EP/X015742/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: WRM\FT\180009
  funder_name: Royal Society
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: 'FP7 Ideas: European Research Council'
- funder_name: Graphene Flagship
- identifier: '101019828'
  funder_name: H2020 European Research Council

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## Fileset

- id: e3d94cf0-0a52-47e2-8789-83693a5f42ee
  filename: acsnano.3c03261.pdf
  content_type: application/pdf
  size: 5295638
  md5: cf6fe870425b47dd240f78d26b9fe90f

## Thumbnail

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filename: acsnano.3c03261.pdf