# A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

https://mdr.nims.go.jp/datasets/c4fc7ae7-ef6b-4fe7-afb9-5d618ac97869

## File

- [Advanced Materials - 2022 - Li - A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical.pdf](https://mdr.nims.go.jp/filesets/d2460116-f9ba-4557-b8f9-67b5624f737e/download) ([Detail](https://mdr.nims.go.jp/filesets/d2460116-f9ba-4557-b8f9-67b5624f737e.md))

## Id

c4fc7ae7-ef6b-4fe7-afb9-5d618ac97869

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T00:27:08.465918Z

## Updated at

2025-02-14T03:31:45.824455Z

## Published at

2025-02-14T03:31:45.889491Z

## Doi



## First published url

https://doi.org/10.1002/adma.202208266

## Date published

2022-12-18

## Recorded date published

2023-2

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical
    Heterojunction Memory
  title_type: original
  lang: en

## Description

- description: Ferroelectricity, one of the keys to realize non-volatile memories
    owing to the remanent electric polarization, is an emerging phenomenon in the
    2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric
    materials as an ingredient are very limited. Especially, gate-tunable ferroelectric
    vdW memristive device, which holds promises in future multi-bit data storage applications,
    remains challenging. Here, a gate-programmable multi-state memory is shown by
    vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal(M)-ferroelectric(FE)-semiconductor(S)
    architecture. The resulted devices seamlessly integrate the functionality of both
    FE-memristor (with ONーOFF ratios exceeding 105 and long-term retention) and metal-oxide-semiconductor
    field effect transistor (MOS-FET). Thus, it yields a prototype of gate tunable
    giant electroresistance with multi-levelled ON-states in the FE-memristor in the
    vertical vdW assembly. First-principles calculations further reveal that such
    behaviors originate from the specific band alignment between the FE-S interface.
    Our findings pave the way for the engineering of ferroelectricity-mediated memories
    in future implementations of 2D nanoelectronics.
  description_type: abstract
  lang: und

## Creator

- name: Wanying Li
  role: author
- name: Yimeng Guo
  role: author
- name: Zhaoping Luo
  role: author
- name: Shuhao Wu
  role: author
- name: Bo Han
  role: author
- name: Weijin Hu
  role: author
- name: Lu You
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Thomas Alava
  role: author
- name: Jiezhi Chen
  role: author
- name: Peng Gao
  role: author
- name: Xiuyan Li
  role: author
- name: Zhongming Wei
  role: author
- name: Lin‐Wang Wang
  role: author
- name: Yue‐Yang Liu
  role: author
- name: Chengxin Zhao
  role: author
- name: Xuepeng Zhan
  role: author
- name: Zheng Vitto Han
  role: author
- name: Hanwen Wang
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Ferroelectricity
  schema: not_defined
- subject: van der Waals memories
  schema: not_defined
- subject: gate-tunable
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Materials
  issn: '15214095'
  volume: '35'
  issue: '5'
  article_number: '2208266'

## Conference



## Related item



## Funding

- identifier: '11974357'
  funder_name: National Natural Science Foundation of China
- identifier: '12104462'
  funder_name: National Natural Science Foundation of China
- identifier: '92265203'
  funder_name: National Natural Science Foundation of China
- identifier: U1932151
  funder_name: National Natural Science Foundation of China

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: d2460116-f9ba-4557-b8f9-67b5624f737e
  filename: Advanced Materials - 2022 - Li - A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor
    Vertical.pdf
  content_type: application/pdf
  size: 5913993
  md5: 0e7b8b4feb4ac3ef0bc63af6d523bfaa

## Thumbnail

fileset_id: d2460116-f9ba-4557-b8f9-67b5624f737e
filename: Advanced Materials - 2022 - Li - A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor
  Vertical.pdf