# Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

https://mdr.nims.go.jp/datasets/c4dc5d2f-25ca-4b44-bee0-e4b19fd2cf4e

## File

- [Ohtake_2024_Jpn._J._Appl._Phys._63_03SP10.pdf](https://mdr.nims.go.jp/filesets/a5b90d77-458b-4f5c-b869-f3fdd51bb81d/download) ([Detail](https://mdr.nims.go.jp/filesets/a5b90d77-458b-4f5c-b869-f3fdd51bb81d.md))

## Id

c4dc5d2f-25ca-4b44-bee0-e4b19fd2cf4e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-02-13T00:53:26.813298Z

## Updated at

2024-02-13T02:12:35.601642Z

## Published at

2024-02-13T03:30:18.953180Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/ad2032

## Date published

2024-03-01

## Recorded date published

2024-3-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin
    InAs interlayers'
  title_type: original
  lang: en

## Description

- description: 'Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates
    has been studied using electron diffraction, x-ray diffraction, and scanning probe
    microscopy. The direct growth of InSb on GaAs(111)A results in a cracked morphology
    with flat terraces and deep gaps, which could be attributed to the extremely large
    lattice mismatch between InSb and GaAs (14.6 %). When thin (5 – 30 monolayer thickness)
    InAs films are used as interlayers, more continuous and flat InSb films are obtained. '
  description_type: abstract
  lang: und

## Creator

- name: Akihiro Ohtake
  role: author
  orcid: https://orcid.org/0000-0002-3519-4613
- name: Takaaki Mano
  role: author
  orcid: https://orcid.org/0000-0002-6955-260X

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: InSb
  schema: not_defined
- subject: InAs
  schema: not_defined
- subject: GaAs
  schema: not_defined
- subject: Metamorphic
  schema: not_defined
- subject: Molecular beam epitaxy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '63'
  issue: '3'
- title: JAPANESE JOURNAL OF APPLIED PHYSICS
  issn: '13474065'
  volume: '63'
  issue: '3'

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## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: a5b90d77-458b-4f5c-b869-f3fdd51bb81d
  filename: Ohtake_2024_Jpn._J._Appl._Phys._63_03SP10.pdf
  content_type: application/pdf
  size: 1231751
  md5: e425286ba8d3fd3f03764f812ded49e8

## Thumbnail

fileset_id: a5b90d77-458b-4f5c-b869-f3fdd51bb81d
filename: Ohtake_2024_Jpn._J._Appl._Phys._63_03SP10.pdf