# Step-and-terrace surface formation on (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

https://mdr.nims.go.jp/datasets/c44a120e-3acf-478f-ac7f-9111ad46bdce

## File

- [jjap_64_8_088001.pdf](https://mdr.nims.go.jp/filesets/293cb49a-a5e9-461f-b465-4f231d839c90/download) ([Detail](https://mdr.nims.go.jp/filesets/293cb49a-a5e9-461f-b465-4f231d839c90.md))

## Id

c44a120e-3acf-478f-ac7f-9111ad46bdce

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-08T23:30:44.711146Z

## Updated at

2025-08-18T07:30:36.605229Z

## Published at

2025-08-18T07:21:29.541961Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/adf380

## Date published

2025-08-01

## Recorded date published

2025-8-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Step-and-terrace surface formation on (001) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>
    by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic
    developer
  title_type: original
  lang: en

## Description

- description: Wet etching of (001) β-Ga2O3 was performed using a standard lithographic
    developer—an aqueous solution of 2.38 wt% tetramethylammonium hydroxide (TMAH)—at
    moderate temperatures of 25 °C and 40 °C. At both temperatures, the chemically-mechanically
    polished surfaces, which consisted of terraces with numerous pits and, in some
    samples, one- to two-monolayer-high islands, were gradually smoothed through a
    layer-by-layer etching process. This resulted in a well-defined step-and-terrace
    surface morphology characterized by pit-free, atomically flat terraces and monolayer
    steps (~0.56 nm). These findings indicate that developer-based etching offers
    a simple yet highly effective approach for preparing (001) β-Ga2O3 surfaces for
    subsequent epitaxial growth or device fabrication.
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: TMAH
  schema: not_defined
- subject: Wet etching
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '8'
  article_number: '088001'

## Conference



## Related item



## Funding

- identifier: JP24K01368
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 293cb49a-a5e9-461f-b465-4f231d839c90
  filename: jjap_64_8_088001.pdf
  content_type: application/pdf
  size: 1021905
  md5: 958e87037cec627c6cca255d6fa59e75

## Thumbnail

fileset_id: 293cb49a-a5e9-461f-b465-4f231d839c90
filename: jjap_64_8_088001.pdf