# Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics https://mdr.nims.go.jp/datasets/c3b34bcc-856c-400a-986f-8bb917ed74ee ## Files - [Sakuma_et_al-2026-Nature_Communications.pdf](https://mdr.nims.go.jp/filesets/28c96eae-8811-473a-91b5-e6271a6fac8d/download) ([Detail](https://mdr.nims.go.jp/filesets/28c96eae-8811-473a-91b5-e6271a6fac8d.md)) - [41467_2026_68320_MOESM1_ESM.pdf](https://mdr.nims.go.jp/filesets/d948eb47-c56e-4b69-9db2-392e21fcf063/download) ([Detail](https://mdr.nims.go.jp/filesets/d948eb47-c56e-4b69-9db2-392e21fcf063.md)) ## Id c3b34bcc-856c-400a-986f-8bb917ed74ee ## Local identifier ## Visibility open_to_public ## State published ## Created at 2026-01-27T22:42:42.314926Z ## Updated at 2026-01-29T07:30:04.338570Z ## Published at 2026-01-29T04:54:41.179752Z ## Doi ## First published url https://doi.org/10.1038/s41467-026-68320-8 ## Date published 2026-01-21 ## Recorded date published ## Resource type journal_article ## Manuscript type vor ## Collection ## Title - title: Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics title_type: original lang: en ## Description - description: Unidirectional nucleation followed by seamless stitching has emerged as a promising strategy for the scalable epitaxial growth of single-crystalline monolayer transition metal dichalcogenides on sapphire substrates, which hold potential for post-silicon electronics. In contrast, here we present a different growth mechanism for single-crystalline MoS2 on c-plane sapphire via metal-organic chemical vapor deposition (MOCVD). We show that the initial nucleation generates not only 0° and antiparallel 60° domains but also low-angle twisted domains, consistent with the coincidence site lattice framework. However, these rotationally misoriented domains are observed to deterministically self-align and merge into energetically preferred 0° domain during coalescence, yielding a continuous, unidirectional single-crystal. Additionally, by employing MoO2Cl2 as a molybdenum precursor, we demonstrate that the growth of MoS2 occurs in a self-limiting manner. This epitaxial strategy is substantiated by a carrier mobility of 66 cm2/Vs at room temperature and 749 cm2/Vs at low temperatures. Our approach offers a practical and reproducible scheme for MOCVD-based van der Waals epitaxy for 2D electronics. description_type: abstract lang: und ## Creator - name: Yoshiki Sakuma role: author orcid: https://orcid.org/0000-0001-6804-7217 organization: National Institute for Materials Science - name: Keisuke Atsumi role: author - name: Takanobu Hiroto role: author orcid: https://orcid.org/0000-0002-6176-5782 organization: National Institute for Materials Science - name: Jun Nara role: author orcid: https://orcid.org/0000-0002-0486-2981 organization: National Institute for Materials Science - name: Akihiro Ohtake role: author orcid: https://orcid.org/0000-0002-3519-4613 organization: National Institute for Materials Science - name: Yuki Ono role: author - name: Takashi Matsumoto role: author - name: Yukihiro Muta role: author - name: Kai Takeda role: author - name: Emi Kano role: author - name: Toshiki Yasuno role: author - name: Xu Yang role: author - name: Nobuyuki Ikarashi role: author - name: Asato Suzuki role: author - name: Michio Ikezawa role: author - name: Shuhong Li role: author - name: Tomonori Nishimura role: author - name: Kaito Kanahashi role: author - name: Kosuke Nagashio role: author ## Contact agent ## Publisher organization: Springer Science and Business Media LLC ## Managing organization ## Keyword - subject: MoS2 schema: not_defined - subject: epitaxial growth schema: not_defined - subject: MOCVD schema: not_defined ## Rights - identifier: https://creativecommons.org/licenses/by/4.0/ date_licensed: 2026-01-21 ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo ## Journal - title: Nature Communications issn: '20411723' volume: '17' issue: '1' article_number: '602' ## Conference ## Related item ## Funding - identifier: JP21H05237 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP21H05232 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP22H04957 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP17H03241 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP23K04592 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP23K03272 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP22K04212 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JP23K13622 funder_name: MEXT | Japan Society for the Promotion of Science - identifier: JPMJCR24A3 funder_name: MEXT | JST | Core Research for Evolutional Science and Technology ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 28c96eae-8811-473a-91b5-e6271a6fac8d filename: Sakuma_et_al-2026-Nature_Communications.pdf content_type: application/pdf size: 3012483 md5: 0ac53f30222267c734e152097df5cc9d - id: d948eb47-c56e-4b69-9db2-392e21fcf063 filename: 41467_2026_68320_MOESM1_ESM.pdf content_type: application/pdf size: 6077556 md5: 8b7c2855ac81941f70c355d7fc7f84d5 ## Thumbnail fileset_id: 28c96eae-8811-473a-91b5-e6271a6fac8d filename: Sakuma_et_al-2026-Nature_Communications.pdf