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説明:

The field effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors is one important phenomenon in this novel class of materials. Thanks to their reduced thickness, electric fields can easily penetrate in 2D semiconductor and modulate their charge density and consequently their properties. The field effect is routinely used to fabricate atomically thin field effect transistors based on 2D semiconductors. In literature, it has been demonstrated that the field effect can also be used to modulate the excitonic optical emission of 2D transition metal dichalcogenides such as MoS2 or WSe2. In this paper we present some recent experiments on the field effect control of the optical properties of monolayer WS2. In the paper we also discuss how the full encapsulation of WS2 with insulating boron nitride helps in this field effect control by reducing spurious hysteretic effects and by increasing the tunability of the optical emission of WS2.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Field-effect control, van der Waals semiconductors, excitonic optical emission

刊行年月日: 2022-12-12

出版者: MDPI AG

掲載誌:

• Nanomaterials (ISSN: 20794991) vol. 12 issue. 24 4425

研究助成金:

• Spanish Ministry of Science and Innovation PID2020-118078RB-I00
• Comunidad de Madrid Y2020/NMT-6661
• European Research Council GA 755655
• European Union’s Horizon 2020 research and innovation program 956,813
• EU FLAG-ERA JTC-2019-009
• TECNOMED-Tecnopolo di nanotecnologia e fotonica per la medicina di precisione CUP B83B17000010001
• TecnoMed Puglia-Tecnopolo per la medicina di Precisione-Regione Puglia CUP B84I18000540002
• JSPS KAKENHI 19H05790
• JSPS KAKENHI 20H00354
• JSPS KAKENHI 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3390/nano12244425

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更新時刻: 2025-02-26 16:30:42 +0900

MDRでの公開時刻: 2025-02-26 16:30:42 +0900