# Locally Doped Transferred Contacts for WSe<sub>2</sub> Transistors

https://mdr.nims.go.jp/datasets/c300fad0-96db-442a-8980-b2a1427af710

## File

- [chen-et-al-2024-locally-doped-transferred-contacts-for-wse2-transistors.pdf](https://mdr.nims.go.jp/filesets/37253ed9-7aab-4628-9d87-1a45717b9d07/download) ([Detail](https://mdr.nims.go.jp/filesets/37253ed9-7aab-4628-9d87-1a45717b9d07.md))

## Id

c300fad0-96db-442a-8980-b2a1427af710

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-05T04:38:41.283143Z

## Updated at

2025-02-05T07:30:33.880627Z

## Published at

2025-02-05T07:30:33.942465Z

## Doi



## First published url

https://doi.org/10.1021/acsaelm.4c01574

## Date published

2024-11-26

## Recorded date published

2024-11-26

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Locally Doped Transferred Contacts for WSe<sub>2</sub> Transistors
  title_type: original
  lang: en

## Description

- description: "While two-dimensional (2D) materials have shown great promise for
    scaling technology nodes beyond the limits of silicon devices, key challenges
    remain for realizing high quality and practical 2D field effect transistors (FETs),
    including lowering contact resistance, demonstrating device structures with high
    electrical stability and reduced interface charge trapping, and integrating n-
    and p-FETs for beyond-CMOS devices. High contact resistance often stems from Schottky
    contacts and Fermi level pinning, and can be reduced by local doping or transferred
    contacts, respectively. However, these approaches have so far been mutually incompatible.
    We demonstrate a locally-doped transferred contact device stack, where metal via
    contacts embedded in hexagonal boron nitride (hBN) contain a local access region
    through which otherwise fully encapsulated WSe2 channels are surface charge transfer
    doped by oxygen plasma treatment, creating a lateral p+–i–p+ junction FET. The
    geometry of gates, doped access regions, and the channel are all defined by electron
    beam lithograph giving full and precise control over size and position. The p-FET
    behavior is strongly enhanced with high on/off ratio up to 107, but ambipolar
    characteristics from the intrinsic channel are still retained. Negligible, temperature-independent
    hysteresis is achieved from T = 10 to 300 K, with only back gate carrier control.
    High electrical stability is evident in excellent reproducibility of transfer
    characteristics between multiple contact sets on a single device and different
    devices. The doping reduces contact resistance by reducing Schottky barrier height
    and width, achieving Ohmic IV characteristics. The doping appears very stable,
    with negligible degradation of performance keeping the device for 50 days in atmosphere.
    This relatively simple device structure incorporates two important strategies
    to improve con- tact quality, improving p-FET performance while retaining intrinsic
    ambipolar channel properties for applications integrating n- and p-FETs.\r\n"
  description_type: abstract
  lang: und

## Creator

- name: He-Yu Chen
  role: author
  orcid: https://orcid.org/0009-0004-7101-9179
- name: Jheng-Jie Lin
  role: author
  orcid: https://orcid.org/0009-0002-1263-9453
- name: Sheng-Shong Wong
  role: author
- name: Zhen-You Lin
  role: author
- name: Yu-Chiang Hsieh
  role: author
  orcid: https://orcid.org/0009-0001-3346-9548
- name: Kuo-En Chang
  role: author
- name: Chung-Lin Wu
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Tse-Ming Chen
  role: author
- name: Luke W. Smith
  role: author
  orcid: https://orcid.org/0000-0003-2194-4708

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 2D field-effect transistors
  schema: not_defined
- subject: contact resistance
  schema: not_defined
- subject: WSe2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: ACS Applied Electronic Materials
  issn: '26376113'
  volume: '6'
  issue: '11'
  start_page: 8319
  end_page: 8327

## Conference



## Related item



## Funding

- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: Taiwan Semiconductor Manufacturing Company
- identifier: 111-2112-M-006-036-MY3
  funder_name: National Science and Technology Council
- funder_name: Ministry of Education Taiwan

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 37253ed9-7aab-4628-9d87-1a45717b9d07
  filename: chen-et-al-2024-locally-doped-transferred-contacts-for-wse2-transistors.pdf
  content_type: application/pdf
  size: 4454097
  md5: '08b96b8c1a9b8d252ffae96fa41868fc'

## Thumbnail

fileset_id: 37253ed9-7aab-4628-9d87-1a45717b9d07
filename: chen-et-al-2024-locally-doped-transferred-contacts-for-wse2-transistors.pdf