# Current-induced brightening of vacancy-related emitters in hexagonal boron nitride

https://mdr.nims.go.jp/datasets/c12644c8-4448-4ed5-880b-29816be0fcc9

## Files

- [cd62-5hq8.pdf](https://mdr.nims.go.jp/filesets/e18340ad-d5c7-4da3-a5e0-955f94741fff/download) ([Detail](https://mdr.nims.go.jp/filesets/e18340ad-d5c7-4da3-a5e0-955f94741fff.md))

## Id

c12644c8-4448-4ed5-880b-29816be0fcc9

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-14T10:05:20.703781Z

## Updated at

2026-02-16T07:31:11.434755Z

## Published at

2026-02-16T04:57:33.497912Z

## Doi



## First published url

https://doi.org/10.1103/cd62-5hq8

## Date published

2025-08-19

## Recorded date published

2025-8

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Current-induced brightening of vacancy-related emitters in hexagonal boron
    nitride
  title_type: original
  lang: en

## Description

- description: We perform photoluminescence measurements on vacancy-related emitters
    in hexagonal boron nitride (hBN) that are notorious for their low quantum yields.
    The gating of these emitters via few-layer graphene electrodes reveals a reproducible,
    gate-dependent brightening of the emitter, which coincides with a change in the
    direction of the simultaneously measured leakage current across the hBN layers.
    At the same time, we observe that the relative increase of the brightening effect
    scales with the intensity of the excitation laser. Both observations can be explained
    in terms of a photo-assisted electroluminescence effect. Interestingly, emitters
    can also show the opposite behavior, i.e. a decrease in emitter intensity that
    depends on the gate leakage current. We explain these two completely different
    behaviors with different concentrations of donor and acceptor states in the hBN
    and show that precise control of the doping of hBN is necessary to gain control
    over the brightness of dark emitters by electrical means. Our findings contribute
    to a deeper understanding of vacancy-related defects that is necessary to make
    use of their potential for quantum information processing.
  description_type: abstract
  lang: und

## Creator

- name: Corinne Steiner
  role: author
- name: Rebecca Rahmel
  role: author
- name: Frank Volmer
  role: author
- name: Rika Windisch
  role: author
- name: Lars H. Janssen
  role: author
- name: Patricia Pesch
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Florian Libisch
  role: author
- name: Bernd Beschoten
  role: author
- name: Christoph Stampfer
  role: author
- name: Annika Kurzmann
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: hexagonal boron nitride
  schema: not_defined
- subject: 'vacancy-related emitters
    '
  schema: not_defined
- subject: 'photoluminescence
    '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-08-19

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Physical Review Research
  issn: '26431564'
  volume: '7'
  issue: '3'
  article_number: L032037

## Conference



## Related item



## Funding

- identifier: EXC 2004/1 - 390534769
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: 10.55776/DOC142
  funder_name: Austrian Science Fund
- identifier: 10.55776/COE5
  funder_name: Austrian Science Fund

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: e18340ad-d5c7-4da3-a5e0-955f94741fff
  filename: cd62-5hq8.pdf
  content_type: application/pdf
  size: 796241
  md5: 6c800c276d2994cc14819e2b58926bb8

## Thumbnail

fileset_id: e18340ad-d5c7-4da3-a5e0-955f94741fff
filename: cd62-5hq8.pdf