# Momentum-forbidden dark excitons in hBN-encapsulated monolayer MoS2

https://mdr.nims.go.jp/datasets/c0504290-ed28-4091-9f5b-3321d717c46d

## File

- [s41699-019-0108-4.pdf](https://mdr.nims.go.jp/filesets/b183f94c-f727-45b4-a12e-319fd9558232/download) ([Detail](https://mdr.nims.go.jp/filesets/b183f94c-f727-45b4-a12e-319fd9558232.md))

## Id

c0504290-ed28-4091-9f5b-3321d717c46d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-20T04:12:56.100780Z

## Updated at

2025-02-23T13:50:08.426697Z

## Published at

2025-02-23T13:50:08.513503Z

## Doi



## First published url

https://doi.org/10.1038/s41699-019-0108-4

## Date published

2019-07-19

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Momentum-forbidden dark excitons in hBN-encapsulated monolayer MoS2
  title_type: original
  lang: en

## Description

- description: We present measurements of temperature dependence of photoluminescence
    intensity from monolayer MoS2 encapsulated by hexagonal boron nitride (hBN) flakes.
    The obtained temperature dependence shows an opposite trend to that of previously
    observed in a monolayer MoS2 on a SiO2 substrate. Ab-initio bandstructure calculations
    have revealed that monolayer MoS2 encapsulated by hBN flakes have no longer a
    direct-gap semiconductor but an indirect-gap semiconductor. This is caused by
    orbital hybridization between MoS2 and hBN, which leads to upward shift of gamma-valley
    of MoS2. This work shows an important implication that the hBN-encapsulation structure
    used to address intrinsic properties of two-dimensional crystals can alter basic
    properties encapsulated materials in some cases.
  description_type: abstract
  lang: und

## Creator

- name: Yosuke Uchiyama
  role: author
- name: Alex Kutana
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Kana Kojima
  role: author
- name: Takahiko Endo
  role: author
- name: Yasumitsu Miyata
  role: author
- name: Hisanori Shinohara
  role: author
- name: Ryo Kitaura
  role: author
  orcid: https://orcid.org/0000-0001-8108-109X
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Hexagonal boron nitride
  schema: not_defined
- subject: photoluminescence
  schema: not_defined
- subject: dark excitons
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: npj 2D Materials and Applications
  issn: '23977132'
  volume: '3'
  issue: '1'
  article_number: '26'

## Conference



## Related item



## Funding

- identifier: JP15K13283
  funder_name: MEXT | Japan Society for the Promotion of Science
- identifier: JP16H06331
  funder_name: MEXT | Japan Society for the Promotion of Science
- identifier: JPMJCR16F3
  funder_name: MEXT | JST | Core Research for Evolutional Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: b183f94c-f727-45b4-a12e-319fd9558232
  filename: s41699-019-0108-4.pdf
  content_type: application/pdf
  size: 1533896
  md5: 5aea5febb2bd8cc33c4b111a956933ff

## Thumbnail

fileset_id: b183f94c-f727-45b4-a12e-319fd9558232
filename: s41699-019-0108-4.pdf