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Current-induced domain-wall motion (CIDWM) in a synthetic antiferromagnet is a key phenomenon for developing potential high-density-packed magnetic domain-wall memory with fast operation. Here, CIDWM is reported in the antiferromagnetically-coupled two Co layers through the Ir interlayer sandwiched by the two Pt layers: Pt/Co/Ir/Co/Pt. The top and bottom Pt layers play a role for generating the spin current coming from the spin Hall effect, which gives rise to the dual spin-orbit torque (SOT) acting on the perpendicular magnetizations of the Co layers. Although a simple argument would predict that SOTs from top and bottom Pt layers cancel each other out, the dual SOT nucleates a reversed magnetic domain and drives the CIDWM effectively at current density of the order of 1011 A m−2. This study also examines the effect of antisymmetric interlayer exchange coupling (AIEC) on CIDWM. A positive correlation between the magnitude of AIEC and the domain wall velocity is found, whereas the current density required for nucleating the reversed domain shows a negative correlation with the magnitude of AIEC. These facts suggest that the existence of AIEC improves the performance of CIDWM. The present results provide a new avenue to design SOT domain wall devices based on a synthetic antiferromagnet.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Magnetic domain wall, Spin-orbit torque, Synthetic antiferromagnet

刊行年月日: 2025-10-17

出版者: Wiley

掲載誌:

• Advanced Science (ISSN: 21983844) vol. 12 issue. 48 e14598

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/advs.202514598

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更新時刻: 2026-01-09 15:03:40 +0900

MDRでの公開時刻: 2026-01-09 16:22:02 +0900