# Au-Ge eutectic droplet formation on the initial stage of selective-area VLS growth of Ge nanowires on Si (111)

https://mdr.nims.go.jp/datasets/bf9ac49e-281c-430e-9ccf-e0c95e74dbad

## File

- [ISCSI_XICSI_ISTDM2025_S_Yamaguchi_Hokkaido_Univ_submitted.pdf](https://mdr.nims.go.jp/filesets/cb83d50a-1b8c-4946-b49c-9fcb7e84a200/download) ([Detail](https://mdr.nims.go.jp/filesets/cb83d50a-1b8c-4946-b49c-9fcb7e84a200.md))

## Id

bf9ac49e-281c-430e-9ccf-e0c95e74dbad

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-12T02:22:20.547892Z

## Updated at

2025-11-14T03:30:04.374561Z

## Published at

2025-11-14T03:23:52.690912Z

## Doi

https://doi.org/10.48505/nims.5908

## First published url



## Date published



## Recorded date published



## Resource type

conference_presentation

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Au-Ge eutectic droplet formation on the initial stage of selective-area VLS
    growth of Ge nanowires on Si (111)
  title_type: original
  lang: en

## Description

- description: Semiconductor nanowires (NWs) have recently attracted great attention
    as a building block candidate to overcome the physical limitations associated
    with device miniaturization and high degree of integration. The long-term research
    aim is to realize a promising device architecture called the vertical gate-all-around
    (GAA) NW transistors, which utilize semiconducting Ge NWs to break through the
    device performance. Our goal for the GAA-NW transistors is to establish a technique
    that enables vertical Ge NW growth with precisely controlled position and diameter
    by using electron beam lithography and conventional lift-off processes to define
    the location and size of circular Au thin film patterns. In this paper, we investigated
    the behavior of the Au–Ge eutectic at the initial stages of Ge growth toward the
    vertical growth of Ge NWs via the VLS method. When Ge gas was supplied to Au thin
    film patterns, we observed that the circular Au disk patterns transformed into
    an Au–Ge eutectic liquid and, subsequently, aggregated into a spherical form at
    a certain point (between 4 and 7 min) of the annealing at 360 °C. In addition,
    we confirmed that a higher GeH₄ partial pressure and a lower growth temperature
    led to the faster Ge NW growth. However, the growth at the low temperature of
    330 °C tended to have a poor uniformity, implying a trade-off between the growth
    rate and the structural uniformity of Ge NWs.
  description_type: abstract
  lang: eng

## Creator

- name: Shuya Yamaguchi
  role: author
  organization: RCIQE, Hokkaido University
- name: Shuma Yuzawa
  role: author
  organization: RCIQE, Hokkaido University
- name: Wipakorn Jevasuwan
  role: author
  orcid: https://orcid.org/0000-0001-9117-2497
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Nanostructured Semiconducting Materials Group
- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Nanostructured Semiconducting Materials Group
- name: Shinjiro Hara
  role: author
  orcid: https://orcid.org/0000-0003-3047-3565
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Semiconductor Nano-integration Group

## Contact agent



## Publisher



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## Keyword

- subject: Nanowires
  schema: not_defined
- subject: Chemical Vapor Depsition
  schema: not_defined
- subject: VLS, Selective-Area Growth
  schema: not_defined
- subject: Semiconductor
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal



## Conference

name: The 10th International Symposium on Control of Semiconductor Interface, International
  Conference on Silicon Epitaxy, and International SiGe Technology and Device Meeting
  (ISCSI-X & ICSI/ISTDM 2025)
start_date: 2025-11-10
end_date: 2025-11-13
identifier: https://iscsi.sakura.ne.jp/iscsi10/

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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: cb83d50a-1b8c-4946-b49c-9fcb7e84a200
  filename: ISCSI_XICSI_ISTDM2025_S_Yamaguchi_Hokkaido_Univ_submitted.pdf
  content_type: application/pdf
  size: 518605
  md5: ccbc8f15d0b566f69c94a61a63711545

## Thumbnail

fileset_id: cb83d50a-1b8c-4946-b49c-9fcb7e84a200
filename: ISCSI_XICSI_ISTDM2025_S_Yamaguchi_Hokkaido_Univ_submitted.pdf