# Magneto-transport properties in perpendicularly magnetized magnetic tunnel junctions using an Mg40Fe10O50 tunnel barrier

https://mdr.nims.go.jp/datasets/bf1aa179-72b3-4dca-90e3-8bc155c6fa0c

## File

- [Magneto-transport properties in perpendicularly magnetized magnetic tunnel junctions using an Mg40Fe10O50 tunnel barrier.pdf](https://mdr.nims.go.jp/filesets/27f83f91-a404-41fa-9777-091af1380dc2/download) ([Detail](https://mdr.nims.go.jp/filesets/27f83f91-a404-41fa-9777-091af1380dc2.md))

## Id

bf1aa179-72b3-4dca-90e3-8bc155c6fa0c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-04-03T05:26:10.502797Z

## Updated at

2026-02-09T03:30:04.078056Z

## Published at

2026-02-09T00:54:03.857210Z

## Doi

https://doi.org/10.48505/nims.5406

## First published url

https://doi.org/10.1016/j.actamat.2024.119749

## Date published

2024-02-09

## Recorded date published

2024-4

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Magneto-transport properties in perpendicularly magnetized magnetic tunnel
    junctions using an Mg40Fe10O50 tunnel barrier
  title_type: original
  lang: en

## Description

- description: We develop perpendicularly magnetized magnetic tunnel junctions (MTJs)
    consisting of a CoFeB/Mg40Fe10O50 (MgFeO)/CoFeB multilayer. The use of MgFeO yields
    a substantial improvement in the flatness of MTJ film stack compared with conventional
    MTJ films using MgO as a tunnel barrier layer, and 1.7 times enhancement in the
    perpendicular magnetic anisotropy energy is obtained for the ultrathin CoFeB layer
    deposited on the MgFeO layer. Nanostructural analysis combined with elemental
    distribution mapping reveals the formation of highly (001)-oriented MgFeO in the
    as-deposited MTJ film, and the crystalline MgFeO layer effectively inhibits diffusion
    of B atoms from the CoFeB layers through the tunnel barrier layer during post-annealing
    process. Accordingly, the MgFeO-MTJ exhibits superior stability against high temperature
    annealing and a large tunnel magnetoresistance ratio of 235% is demonstrated in
    MTJ nanopillar devices after annealing at 400◦C. Ferromagnetic resonance measurements
    also reveal a reduced magnetic damping in the MgFeO-MTJs owing to the improved
    uniformity in the CoFeB layer. The present experimental results will facilitate
    the development of magnetoresistive memory devices with increasing memory density
    and higher energy efficiencies.
  description_type: abstract
  lang: und

## Creator

- name: Tatsuya Yamamoto
  role: author
- name: Tomohiro Ichinose
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
- name: Takayuki Nozaki
  role: author
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
- name: Kay Yakushiji
  role: author
- name: Shingo Tamaru
  role: author
- name: Hitoshi Kubota
  role: author
- name: Shinji Yuasa
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: transmission electron microscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-02-09
end_date: 2026-02-09

## Journal

- title: Acta Materialia
  issn: '13596454'
  volume: '267'
  article_number: '119749'

## Conference



## Related item



## Funding

- identifier: JPNP16007
  funder_name: New Energy and Industrial Technology Development Organization

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 27f83f91-a404-41fa-9777-091af1380dc2
  filename: Magneto-transport properties in perpendicularly magnetized magnetic tunnel
    junctions using an Mg40Fe10O50 tunnel barrier.pdf
  content_type: application/pdf
  size: 3359393
  md5: c8364976b0637bcd79fc778a4c0046f7

## Thumbnail

fileset_id: 27f83f91-a404-41fa-9777-091af1380dc2
filename: Magneto-transport properties in perpendicularly magnetized magnetic tunnel
  junctions using an Mg40Fe10O50 tunnel barrier.pdf