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We develop perpendicularly magnetized magnetic tunnel junctions (MTJs) consisting of a CoFeB/Mg40Fe10O50 (MgFeO)/CoFeB multilayer. The use of MgFeO yields a substantial improvement in the flatness of MTJ film stack compared with conventional MTJ films using MgO as a tunnel barrier layer, and 1.7 times enhancement in the perpendicular magnetic anisotropy energy is obtained for the ultrathin CoFeB layer deposited on the MgFeO layer. Nanostructural analysis combined with elemental distribution mapping reveals the formation of highly (001)-oriented MgFeO in the as-deposited MTJ film, and the crystalline MgFeO layer effectively inhibits diffusion of B atoms from the CoFeB layers through the tunnel barrier layer during post-annealing process. Accordingly, the MgFeO-MTJ exhibits superior stability against high temperature annealing and a large tunnel magnetoresistance ratio of 235% is demonstrated in MTJ nanopillar devices after annealing at 400◦C. Ferromagnetic resonance measurements also reveal a reduced magnetic damping in the MgFeO-MTJs owing to the improved uniformity in the CoFeB layer. The present experimental results will facilitate the development of magnetoresistive memory devices with increasing memory density and higher energy efficiencies.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: transmission electron microscopy

刊行年月日: 2024-02-09

出版者: Elsevier BV

掲載誌:

• Acta Materialia (ISSN: 13596454) vol. 267 119749

研究助成金:

• New Energy and Industrial Technology Development Organization JPNP16007

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5406

公開URL: https://doi.org/10.1016/j.actamat.2024.119749

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更新時刻: 2026-02-09 12:30:04 +0900

MDRでの公開時刻: 2026-02-09 09:54:03 +0900