# Homochiral carbon nanotube van der Waals crystals

https://mdr.nims.go.jp/datasets/be63182c-34c8-4cb3-a60e-78d6f521ef4f

## File

- [2025A01053G_Homochiral carbon nanotube crystals.pdf](https://mdr.nims.go.jp/filesets/5ac35af9-27ce-4dbc-a71e-4ee28cdcbd69/download) ([Detail](https://mdr.nims.go.jp/filesets/5ac35af9-27ce-4dbc-a71e-4ee28cdcbd69.md))

## Id

be63182c-34c8-4cb3-a60e-78d6f521ef4f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-27T23:53:29.189438Z

## Updated at

2026-07-28T05:12:00.731667Z

## Published at

2026-07-28T07:27:18.339363Z

## Doi



## First published url

https://doi.org/10.1126/science.adu1756

## Date published

2025-03-21

## Recorded date published

2025-3-21

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Homochiral carbon nanotube van der Waals crystals
  title_type: original
  lang: en

## Description

- description: For applications of single-walled carbon nanotubes (SWNTs) in integrated
    circuits, it is crucial to have high–tube density arrays of SWNTs that are well
    aligned and purely semiconducting. In this work, we report on the direct growth
    of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating
    high alignment and uniform chirality within each array. Molecular dynamics simulations
    suggest that a self-assembly growth mechanism resulted from the intertube van
    der Waals attraction and the ultralow sliding friction of SWNTs on the atomically
    flat hBN substrate. Field-effect transistors constructed from the grown SWNT array
    exhibit high performance at room temperature, with mobilities of up to 2000 square
    centimeters per volt per second, on/off ratios of ~107, and a maximum current
    density of ~6 milliamperes per micrometer.
  description_type: abstract
  lang: en

## Creator

- name: Zhichun Zhang
  role: author
- name: Yi Chen
  role: author
- name: Peiyue Shen
  role: author
- name: Jiajun Chen
  role: author
- name: Sen Wang
  role: author
- name: Bo Wang
  role: author
- name: Saiqun Ma
  role: author
- name: Bosai Lyu
  role: author
- name: Xianliang Zhou
  role: author
- name: Shuo Lou
  role: author
- name: Zhenghan Wu
  role: author
- name: Yufeng Xie
  role: author
- name: Chengjia Zhang
  role: author
- name: Liguo Wang
  role: author
- name: Kunqi Xu
  role: author
- name: Haonan Li
  role: author
- name: Guohua Wang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Dong Qian
  role: author
- name: Jinfeng Jia
  role: author
- name: Qi Liang
  role: author
- name: Xiaoqun Wang
  role: author
- name: Wei Yang
  role: author
- name: Guangyu Zhang
  role: author
- name: Chuanhong Jin
  role: author
- name: Wengen Ouyang
  role: author
- name: Zhiwen Shi
  role: author

## Contact agent



## Publisher

organization: American Association for the Advancement of Science (AAAS)

## Managing organization



## Keyword

- subject: Single-walled carbon nanotube
  schema: not_defined
- subject: Hexagonal boron nitride
  schema: not_defined
- subject: Field-effect transistor
  schema: not_defined

## Rights

- description: 'This is the author’s version of the work. It is posted here by permission
    of the AAAS for personal use, not for redistribution. The definitive version was
    published in Science on March 21, 2025; DOI: 10.1126/science.adu1756.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science
  issn: '10959203'
  volume: '387'
  start_page: 1310
  end_page: 1316

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 5ac35af9-27ce-4dbc-a71e-4ee28cdcbd69
  filename: 2025A01053G_Homochiral carbon nanotube crystals.pdf
  content_type: application/pdf
  size: 6554261
  md5: 2191e87675800a607ad1700af95a15a8

## Thumbnail

fileset_id: 5ac35af9-27ce-4dbc-a71e-4ee28cdcbd69
filename: 2025A01053G_Homochiral carbon nanotube crystals.pdf