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説明:

We demonstrate a simple chemical polishing process to reduce defects and fabricate a conformable heterojunction between Si nanostructures and PEDOT:PSS. Si nanostructures fabricated by metal-assisted chemical etching (MACE) technique and subsequently treated by the chemical polishing process are spin-coated with PEDOT:PSS to form heterojunction and employed as self-powered broadband photodetector. The optimized device shows superior performance, such as high responsivity of 555.34 mA/W, quick rise/fall times of 79 ms/81 ms, high External Quantum Efficiency (EQE) of 0.8 at zero bias (0 V) and high photostability up to 500 illumination cycles. Dark I-V characteristics and carrier lifetime measurements reveal that the enhanced performance of chemically polished devices is attributed to the formation of a conformable heterojunction and reduction in defects in the Si nanostructures. Given the scalability and simplicity of the demonstrated passivation-free approach, this work may aid the fabrication of highperformance hybrid Si nanostructured photodetectors.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: hybrid heterojunction, Silicon nanostructures, PEDOT:PSS, self-powered photodetector, Metal-assisted chemical etching, chemical polishing

刊行年月日: 2023-11-30

出版者: Elsevier

掲載誌:

• APPLIED SURFACE SCIENCE (ISSN: 01694332) vol. 648 158992

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4607

公開URL: https://doi.org/10.1016/j.apsusc.2023.158992

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更新時刻: 2025-11-30 08:30:04 +0900

MDRでの公開時刻: 2025-11-30 08:21:53 +0900