# Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures

https://mdr.nims.go.jp/datasets/bd36ad12-6021-499a-a383-ec8a0b7e7cd3

## File

- [Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures.pdf](https://mdr.nims.go.jp/filesets/55fb9a93-365f-4b7d-91e6-9cefffbdfa6f/download) ([Detail](https://mdr.nims.go.jp/filesets/55fb9a93-365f-4b7d-91e6-9cefffbdfa6f.md))

## Id

bd36ad12-6021-499a-a383-ec8a0b7e7cd3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-12-21T03:41:30.507260Z

## Updated at

2024-01-10T01:39:02.240414Z

## Published at

2024-01-10T03:30:12.111045Z

## Doi



## First published url

https://doi.org/10.1063/5.0176263

## Date published

2023-12-01

## Recorded date published

2023-12-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions
    prepared by deposition at cryogenic temperatures
  title_type: original
  lang: en

## Description

- description: We investigated the influence of the buffer material and a cryogenic
    temperature deposition process on the voltage-controlled magnetic anisotropy (VCMA)
    effect for an ultrathin CoFeB layer in bottom-free type MgO-based magnetic tunnel
    junctions prepared by a mass production sputtering process. We used Ta and TaB
    buffers and compared the differences between them. The TaB buffer enabled us to
    form a flat and less-contaminated CoFeB/MgO interface by suppressing the diffusion
    of Ta with maintaining a stable amorphous phase. Furthermore, the introduction
    of cryogenic temperature deposition for the ultrathin CoFeB layer on the TaB buffer
    improved the efficiency of the VCMA effect and its annealing tolerance. Combining
    this with interface engineering employing an Ir layer for doping and a CoFe termination
    layer, a large VCMA coefficient of −138 ± 3 fJ/Vm was achieved. The developed
    techniques for the growth of ultrathin ferromagnet and oxide thin films using
    cryogenic temperature deposition will contribute to the development of high-performance
    spintronic devices, such as voltage-controlled magnetoresistive random access
    memories.
  description_type: abstract
  lang: eng

## Creator

- name: Takayuki Nozaki
  role: author
- name: Tomohiro Ichinose
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
- name: Tatsuya Yamamoto
  role: author
- name: Makoto Konoto
  role: author
- name: Kay Yakushiji
  role: author
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
- name: Shinji Yuasa
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Spintronics
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: APL Materials
  issn: 2166532X
  volume: '11'
  issue: '12'
  start_page: 121106
  end_page: 121106

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 55fb9a93-365f-4b7d-91e6-9cefffbdfa6f
  filename: Large voltage-controlled magnetic anisotropy effect in magnetic tunnel
    junctions prepared by deposition at cryogenic temperatures.pdf
  content_type: application/pdf
  size: 9264900
  md5: 9faae832865fd8104fdc8db1915f81e0

## Thumbnail

fileset_id: 55fb9a93-365f-4b7d-91e6-9cefffbdfa6f
filename: Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions
  prepared by deposition at cryogenic temperatures.pdf