Download file (8.84MB)
Download as zip (8.54MB)

コレクション

引用

説明:

We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic anisotropy (VCMA) effect for an ultrathin CoFeB layer in bottom-free type MgO-based magnetic tunnel junctions prepared by a mass production sputtering process. We used Ta and TaB buffers and compared the differences between them. The TaB buffer enabled us to form a flat and less-contaminated CoFeB/MgO interface by suppressing the diffusion of Ta with maintaining a stable amorphous phase. Furthermore, the introduction of cryogenic temperature deposition for the ultrathin CoFeB layer on the TaB buffer improved the efficiency of the VCMA effect and its annealing tolerance. Combining this with interface engineering employing an Ir layer for doping and a CoFe termination layer, a large VCMA coefficient of −138 ± 3 fJ/Vm was achieved. The developed techniques for the growth of ultrathin ferromagnet and oxide thin films using cryogenic temperature deposition will contribute to the development of high-performance spintronic devices, such as voltage-controlled magnetoresistive random access memories.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Spintronics

刊行年月日: 2023-12-01

出版者: AIP Publishing

掲載誌:

• APL Materials (ISSN: 2166532X) vol. 11 issue. 12 p. 121106-121106

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0176263

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-01-10 10:39:02 +0900

MDRでの公開時刻: 2024-01-10 12:30:12 +0900