# Gating monolayer and bilayer graphene with a two-dimensional semiconductor

https://mdr.nims.go.jp/datasets/bb633331-ebbf-40c8-ae33-09690fb68003

## File

- [s41699-025-00551-7.pdf](https://mdr.nims.go.jp/filesets/8f7ca5aa-07b0-4c02-b711-26a9fc553f01/download) ([Detail](https://mdr.nims.go.jp/filesets/8f7ca5aa-07b0-4c02-b711-26a9fc553f01.md))

## Id

bb633331-ebbf-40c8-ae33-09690fb68003

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-15T08:21:22.473670Z

## Updated at

2026-02-17T23:30:21.934833Z

## Published at

2026-02-17T08:57:19.073131Z

## Doi



## First published url

https://doi.org/10.1038/s41699-025-00551-7

## Date published

2025-04-07

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Gating monolayer and bilayer graphene with a two-dimensional semiconductor
  title_type: original
  lang: en

## Description

- description: Metals are typically used as electrostatic gates in devices due to
    their abundant charge carrier densities that are necessary for efficient charging
    and discharging. A semiconducting gate can be beneficial for certain fabrication
    processes, in low light conditions, and for specific gating properties. Here,
    we determine the effectiveness and limitations of a semiconducting gate in graphene
    and bilayer graphene devices. Using the semiconducting transition metal dichalcogenides
    molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2), we show that these
    semiconductors can be used to suitably gate the graphene devices for certain operating
    conditions. For singly gated devices, we find that the semiconducting gates provide
    gating characteristics comparable with metallic gates below liquid helium temperatures
    but include resistivity features resulting from gate voltage clamping of the MoS2.
    A 1D potential model is developed that corroborates the clamping effect observed
    in the measurements. In doubly gated devices, we pin down the parameter range
    of effective operation and show that the semiconducting depletion regime results
    in clamping and hysteresis from defect state charge trapping. Our results provide
    a guide for the appropriate operating conditions for employing semiconducting
    gates and open the door to novel device architectures.
  description_type: abstract
  lang: und

## Creator

- name: Randy M. Sterbentz
  role: author
- name: Bogyeom Kim
  role: author
- name: Anayeli Flores-Garibay
  role: author
- name: Kristine L. Haley
  role: author
- name: Nicholas T. Pereira
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Joshua O. Island
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: graphene gating
  schema: not_defined
- subject: '2D semiconductor
    '
  schema: not_defined
- subject: electrostatic gate
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-04-07

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: npj 2D Materials and Applications
  issn: '23977132'
  volume: '9'
  issue: '1'
  article_number: '29'

## Conference



## Related item



## Funding

- identifier: '2047509'
  funder_name: National Science Foundation
- identifier: '2047509'
  funder_name: National Science Foundation
- identifier: '2047509'
  funder_name: National Science Foundation
- identifier: '2047509'
  funder_name: National Science Foundation
- identifier: '2047509'
  funder_name: National Science Foundation
- identifier: '2047509'
  funder_name: National Science Foundation
- identifier: W911NF2310160
  funder_name: U.S. Army Research Laboratory
- identifier: W911NF2310160
  funder_name: U.S. Army Research Laboratory
- identifier: W911NF2310160
  funder_name: U.S. Army Research Laboratory
- identifier: W911NF2310160
  funder_name: U.S. Army Research Laboratory
- identifier: W911NF2310160
  funder_name: U.S. Army Research Laboratory
- identifier: W911NF2310160
  funder_name: U.S. Army Research Laboratory
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- funder_name: World Premier International Research Center Initiative

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## Fileset

- id: 8f7ca5aa-07b0-4c02-b711-26a9fc553f01
  filename: s41699-025-00551-7.pdf
  content_type: application/pdf
  size: 2176548
  md5: 4d2a5bd153661de63f7cfb9ff4f72024

## Thumbnail

fileset_id: 8f7ca5aa-07b0-4c02-b711-26a9fc553f01
filename: s41699-025-00551-7.pdf