# Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis

https://mdr.nims.go.jp/datasets/ba858434-b6f0-4751-bcb2-7d36ed1e0b77

## File

- [Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis.pdf](https://mdr.nims.go.jp/filesets/2d7794b5-60b7-4dba-905f-7e4ac3cab0fa/download) ([Detail](https://mdr.nims.go.jp/filesets/2d7794b5-60b7-4dba-905f-7e4ac3cab0fa.md))

## Id

ba858434-b6f0-4751-bcb2-7d36ed1e0b77

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-06-06T05:01:24.730854Z

## Updated at

2025-07-16T07:14:54.574377Z

## Published at

2025-06-06T07:20:31.906970Z

## Doi

https://doi.org/10.48505/nims.5524

## First published url

https://doi.org/10.1080/14686996.2025.2512703

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Dislocation cluster generation behavior in multicrystalline silicon investigated
    using twin network analysis
  title_type: original
  lang: en

## Description

- description: We utilized twin network analysis of polycrystalline materials through
    graph theory to visualize microstructures and examine the behavior of dislocation
    cluster generation in multicrystalline silicon grown by directional solidification.
    This approach allows for a rapid and statistical understanding of microstructures
    and their correlations by representing these features and their changes as network
    graphs. Our analysis revealed that dislocation clusters are formed at asymmetric
    Σ27a grain boundaries, which result from a specific twinning process. Gaining
    this knowledge is expected to assist in identifying grain boundary groups that
    can minimize the formation of dislocation clusters.
  description_type: abstract
  lang: en

## Creator

- name: Kazuma Torii
  role: author
  organization: Nagoya University
  department: a Graduate School of Engineering
- name: Takuto Kojima
  role: author
- name: Kentaro Kutsukake
  role: author
- name: Hiroaki Kudo
  role: author
- name: Noritaka Usami
  role: author

## Contact agent



## Publisher

organization: Taylor & Francis

## Managing organization



## Keyword

- subject: Silicon
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: twin grain boundary
  schema: not_defined
- subject: network analysis
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '26'
  article_number: '2512703 '

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 2d7794b5-60b7-4dba-905f-7e4ac3cab0fa
  filename: Dislocation cluster generation behavior in multicrystalline silicon investigated
    using twin network analysis.pdf
  content_type: application/pdf
  size: 3313931
  md5: b0ce6bcbf6483f0f3b5984459bdd79b9

## Thumbnail

fileset_id: 2d7794b5-60b7-4dba-905f-7e4ac3cab0fa
filename: Dislocation cluster generation behavior in multicrystalline silicon investigated
  using twin network analysis.pdf